Laser slicing: A thin film lift-off method for GaN-on-GaN technology

被引：34

作者：

Voronenkov, Vladislav ^{[1
,2
]}

Bochkareva, Natalia ^{[2
]}

Gorbunov, Ruslan ^{[1
,2
]}

Zubrilov, Andrey ^{[1
,2
]}

Kogotkov, Viktor ^{[1
]}

Latyshev, Philipp ^{[1
]}

Lelikov, Yuri ^{[1
,2
]}

Leonidov, Andrey ^{[1
]}

Shreter, Yuri ^{[1
,2
]}

机构：

[1] TRINITRI Technol LLC, St Petersburg, Russia

[2] Ioffe Inst, St Petersburg, Russia

来源：

RESULTS IN PHYSICS | 2019年 / 13卷

关键词：

Laser slicing; Lift-off; InGaN LED; GaN-on-GaN; VAPOR-PHASE-EPITAXY; LIGHT-EMITTING-DIODES; HETEROGENEOUS INTEGRATION; HVPE GROWTH; NITRIDE; BULK; SEPARATION; FABRICATION; DIAMOND; WAFERS;

D O I：

10.1016/j.rinp.2019.102233

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off process did not require any special release layers in the epitaxial structure. GaN film with a thickness of 5 mu m and an InGaN LED epitaxial device structure was lifted off a GaN substrate and transferred onto a copper substrate. The electroluminescence of the LED chip after the laser slicing lift-off was demonstrated.

引用

页数：4

共 53 条

[21] Applications and theory of the solid immersion lens [J].

Kino, GS .

OPTICAL PULSE AND BEAM PROPAGATION, 1999, 3609 :56-66

[22] Layered boron nitride as a release layer for mechanical transfer of GaN-based devices [J].

Kobayashi, Yasuyuki ;

Kumakura, Kazuhide ;

Akasaka, Tetsuya ;

Makimoto, Toshiki .

NATURE, 2012, 484 (7393) :223-227

[23] Microstructuring of diamond bulk by IR femtosecond laser pulses [J].

Kononenko, T. V. ;

Meier, M. ;

Komlenok, M. S. ;

Pimenov, S. M. ;

Romano, V. ;

Pashinin, V. P. ;

Konov, V. I. .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2008, 90 (04) :645-651

[24] Advanced dicing technology for semiconductor wafer - Stealth dicing [J].

Kumagai, Masayoshi ;

Uchiyama, Naoki ;

Ohmura, Etusji ;

Sugiura, Ryuji ;

Atsumi, Kazuhiro ;

Fukumitsu, Kenshi .

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2007, 20 (03) :259-265

[25] Natural substrate lift-off technique for vertical light-emitting diodes [J].

Lee, Chia-Yu ;

Lan, Yu-Pin ;

Tu, Po-Min ;

Hsu, Shih-Chieh ;

Lin, Chien-Chung ;

Kuo, Hao-Chung ;

Chi, Gou-Chung ;

Chang, Chun-Yen .

APPLIED PHYSICS EXPRESS, 2014, 7 (04)

[26] A Novel Growth Method of Freestanding GaN Using In situ Removal of Si Substrate in Hydride Vapor Phase Epitaxy [J].

Lee, Moonsang ;

Mikulik, Dmitry ;

Kim, Joosung ;

Tak, Youngjo ;

Kim, Junyoun ;

Shim, Munbo ;

Park, Youngsoo ;

Chung, Uin ;

Yoon, Euijoon ;

Park, Sungsoo .

APPLIED PHYSICS EXPRESS, 2013, 6 (12)

[27] High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape [J].

Lesecq, M. ;

Hoel, V. ;

des Etangs-Levallois, A. Lecavelier ;

Pichonat, E. ;

Douvry, Y. ;

De Jaeger, J. C. .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (02) :143-145

[28] An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process [J].

Lin, Chia-Feng ;

Dai, Jing-Jie ;

Lin, Ming-Shiou ;

Chen, Kuei-Ting ;

Huang, Wan-Chun ;

Lin, Chun-Min ;

Jiang, Ren-Hao ;

Huang, Yu-Chieh .

APPLIED PHYSICS EXPRESS, 2010, 3 (03)

[29] Fabrication of freestanding 2"-GaN wafers by hydride vapour phase epitaxy and self-separation during cooldown [J].

Lipski, Frank ;

Wunderer, Thomas ;

Schwaiger, Stephan ;

Scholz, Ferdinand .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (06) :1287-1291

[30] Properties of free-standing GaN bulk crystals grown by HVPE [J].

Melnik, Y ;

Nikolaev, A ;

Nikitina, I ;

Vassilevski, K ;

Dmitriev, V .

NITRIDE SEMICONDUCTORS, 1998, 482 :269-274

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