Laser slicing: A thin film lift-off method for GaN-on-GaN technology

被引：34

作者：

Voronenkov, Vladislav ^{[1
,2
]}

Bochkareva, Natalia ^{[2
]}

Gorbunov, Ruslan ^{[1
,2
]}

Zubrilov, Andrey ^{[1
,2
]}

Kogotkov, Viktor ^{[1
]}

Latyshev, Philipp ^{[1
]}

Lelikov, Yuri ^{[1
,2
]}

Leonidov, Andrey ^{[1
]}

Shreter, Yuri ^{[1
,2
]}

机构：

[1] TRINITRI Technol LLC, St Petersburg, Russia

[2] Ioffe Inst, St Petersburg, Russia

来源：

RESULTS IN PHYSICS | 2019年 / 13卷

关键词：

Laser slicing; Lift-off; InGaN LED; GaN-on-GaN; VAPOR-PHASE-EPITAXY; LIGHT-EMITTING-DIODES; HETEROGENEOUS INTEGRATION; HVPE GROWTH; NITRIDE; BULK; SEPARATION; FABRICATION; DIAMOND; WAFERS;

D O I：

10.1016/j.rinp.2019.102233

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off process did not require any special release layers in the epitaxial structure. GaN film with a thickness of 5 mu m and an InGaN LED epitaxial device structure was lifted off a GaN substrate and transferred onto a copper substrate. The electroluminescence of the LED chip after the laser slicing lift-off was demonstrated.

引用

页数：4

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