Simulation studies of non-toxic tin-based perovskites: Critical insights into solar performance kinetics through comparison with standard lead-based devices

被引：17

作者：

Ahmed, Saquib ^{[1
]}

Shaffer, Jon ^{[1
]}

Harris, Jalen ^{[4
]}

Pham, Michael ^{[1
]}

Daniel, Abishai

Chowdhury, Shaestagir ^{[2
]}

Ali, Aboubakr ^{[3
]}

Banerjee, Sankha ^{[4
]}

机构：

[1] SUNY Buffalo State, Dept Mech Engn Technol, 1300 Elmwood Ave, Buffalo, NY 14222 USA

[2] Portland State Univ, Dept Mech & Mat Engn, 1930 SW 4th Ave,Suite 400, Portland, OR 97201 USA

[3] Qatar Univ, Ctr Adv Mat, Doha, Qatar

[4] Calif State Univ Fresno, Dept Mech Engn, 2320 E San Ramon Ave, Fresno, CA 93740 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2019年 / 130卷

关键词：

Perovskite; Simulation; GPVDM; Tin; Lead; Film-thickness; CELLS; RECOMBINATION; TIO2;

D O I：

10.1016/j.spmi.2019.04.017

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have simulated the operation and functionality of a working Sn-based perovskite solar cell device using GPVDM and compared it against a Pb-based device. The results are extremely promising in that they showcase comparable cell efficiencies, with the Sn-based device showing a highest 21.3% efficiency (Jsc of 332.8 A/m(2), Voc of 0.839 V, FF of 0.764) compared to 23.4% of its Pb counterpart (Jsc of 349.3 A/m(2), Voc of 0.811 V, FF of 0.828), at similar active layer thicknesses. A deeper study of each of the Jsc, Voc and FF trends provide keen insight into charge transfer kinetics within the device, paving the way to optimal experimental setups for fabricating the most efficient non-toxic perovskite devices.

引用

页码：20 / 27

页数：8

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