Deposition and characterization of ZnO thin films by modified pulsed-spray pyrolysis

被引：8

作者：

Thilakan, Periyasamy ^{[1
]}

Radheep, D. Mohan ^{[1
]}

Saravanakumar, K. ^{[1
]}

Sasikala, G. ^{[2
]}

机构：

[1] Valliammai Engn Coll, SRM Nagar, Kattankulathur 603203, Tamil Nadu, India

[2] Anna Univ, Dept Phys, Madras 25, Tamil Nadu, India

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2009年 / 24卷 / 08期

关键词：

AL FILMS; GROWTH;

D O I：

10.1088/0268-1242/24/8/085020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Zinc oxide (ZnO) thin films were deposited using modified pulsed-spray pyrolysis on glass substrates. Depositions were carried out using N-2 as the carrier gas and analysed with respect to the rate of deposition. X-ray analysis revealed the presence of mixed crystallization with a nanocrystalline structure of about 6.9 nm dispersed in the amorphous matrix. A negative trend between the bandgap and resistivity was observed with the decrease in the deposition rate. A lowest bandgap of 3.1 eV with a resistivity value of 1.6 x 10(-2) Omega cm was achieved at a lowest deposition rate of 1.3 nm min(-1). Hot-probe measurement revealed the p-type conductivity for the film deposited at a lowest deposition rate of 1.3 nm min(-1). Details about the influence of pulsed-spray deposition for the achievement of this negative trend between bandgap and resistivity will be discussed in this paper.

引用

页数：4

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