Cubic GaN light emitting diode grown by metalorganic vapor-phase epitaxy

被引：0

作者：

Tanaka, H ^{[1
]}

Nakadaira, A ^{[1
]}

机构：

[1] Nippon Telegraph & Tel Corp, Cyber Space Labs, Musashino, Tokyo 1808585, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2000年 / E83C卷 / 04期

关键词：

cubic GaN; light emitting diode; Si-doping; Mg-doping; p-n junction;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We studied Si and Mg doping characteristics in cubic GaN and fabricated a light emitting diode of cubic GaN on a GaAs substrate by metalorganic vapor-phase epitaxy. The diode structure consisted of undoped and Mg-doped GaN stacking layers deposited on Si-doped GaN and AlGaN layers. The electron-beam-induced-current signal and current injection characteristics of this diode structure were measured. There was a peak at the interface between the Mg-doped and undoped GaN in the electron-beam-induced-current signal. This shows successful growth of the p-n junction. Light emitting operation was achieved by currents injected through the conducting GaAs substrate of this diode at room temperature. We observed electroluminescence below the bandgap energy of cubic GaN with a peak at 2.6 eV.

引用

页码：585 / 590

页数：6

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