High-Performance Indium-Gallium-Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide

被引：3

作者：

Marroun, Abdelhafid ^{[1
]}

Touhami, Naima Amar ^{[1
]}

El Hamadi, Taj-eddin ^{[1
]}

El Bakkali, Moustapha ^{[1
]}

机构：

[1] Abdelmalek Essaadi Univ, Fac Sci, MHannech 2, Tetouan 93000, Morocco

来源：

12TH INTERNATIONAL CONFERENCE INTERDISCIPLINARITY IN ENGINEERING (INTER-ENG 2018) | 2019年 / 32卷

关键词：

Thin Film Transistors (TFT); indium gallium zinc oxide (IGZO); (SiO2) gate dielectrics; (Al2O3) gate dielectric; CHANNEL;

D O I：

10.1016/j.promfg.2019.02.278

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, thin-film transistors (TFTs) based on amorphous indium gallium zinc oxide (IGZO) active layer has been investigated. A comparison between (TFT) with (Al2O3) and (TFT) with (SiO2) gate dielectrics was carried out. Results show a low voltage operation for (Al2O3) compared with (Si02). The (Al2O3) gate dielectric possesses low leakage current. The (IGZO) (TFT) based on (Al2O3) shows an on/off current ratio of (10<^>12), and a threshold voltage of only (2V). Further studies show that the (Al2O3) gate dielectric is very compatible with the (IGZO) semiconductor. (C) 2019 The Authors. Published by Elsevier Ltd.

引用

页码：729 / 733

页数：5

共 17 条

[1] A 13.56-MHz RFID system based on organic transponders [J].

Cantatore, Eugenio ;

Geuns, Thomas C. T. ;

Gelinck, Gerwin H. ;

van Veenendaal, Erik ;

Gruijthuijsen, Arnold F. A. ;

Schrijnemakers, Laurens ;

Drews, Steffen ;

de Leeuw, Dago M. .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (01) :84-92

[2]

Cheng S. J., 2004, TED

[3]

Jeong JK, 2007, APPL PHYS LETT

[4] Present status of amorphous In-Ga-Zn-O thin-film transistors [J].

Kamiya, Toshio ;

Nomura, Kenji ;

Hosono, Hideo .

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2010, 11 (04)

[5] Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition [J].

Kim, J. B. ;

Fuentes-Hernandez, C. ;

Potscavage, W. J., Jr. ;

Zhang, X. -H. ;

Kippelen, B. .

APPLIED PHYSICS LETTERS, 2009, 94 (14)

[6] Low-voltage, high-performance n-channel organic thin-film transistors based on tantalum pentoxide insulator modified by polar polymers [J].

Lan, Linfeng ;

Peng, Junbiao ;

Sun, Mingliang ;

Zhou, Jianlin ;

Zou, Jianhua ;

Wang, Jian ;

Cao, Yong .

ORGANIC ELECTRONICS, 2009, 10 (02) :346-351

[7] High-Performance a-IGZO TFT With ZrO2 Gate Dielectric Fabricated at Room Temperature [J].

Lee, Jae Sang ;

Chang, Seongpil ;

Koo, Sang-Mo ;

Lee, Sang Yeol .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (03) :225-227

[8] Influence of Channel Stoichiometry on Zinc Indium Oxide Thin-Film Transistor Performance [J].

McDowell, Matthew G. ;

Hill, Ian G. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (02) :343-347

[9] Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J].

Nomura, K ;

Ohta, H ;

Takagi, A ;

Kamiya, T ;

Hirano, M ;

Hosono, H .

NATURE, 2004, 432 (7016) :488-492

[10] Dual-Gate Photosensitive a-Si:H Thin-Film Transistor With a π-Shape Channel for Large-Area Imaging and Sensing [J].

Ou, Hai ;

Wang, Kai ;

Ding, Cairong ;

Deng, S. Z. ;

Xu, N. S. ;

Chen, Jun .

IEEE ELECTRON DEVICE LETTERS, 2015, 36 (12) :1373-1375

← 1 2 →