External electric field effect on the binding energy of a hydrogenic donor impurity in InGaAsP/InP concentric double quantum rings

被引:12
作者
Hu, Min [1 ]
Wang, Hailong [1 ]
Gong, Qian [2 ]
Wang, Shumin [2 ]
机构
[1] Qufu Normal Univ, Dept Phys, Shandong Prov Key Lab Laser Polarizat & Informat, Qufu 273165, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
来源
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2018年 / 32卷 / 11期
基金
中国国家自然科学基金;
关键词
Concentric double quantum rings; binding energy; hydrogenic donor impurity; external electric field; PHOTOIONIZATION CROSS-SECTION; MAGNETIC-FIELD; HYDROSTATIC-PRESSURE; ALUMINUM CONCENTRATION; OPTICAL-ABSORPTION; STATES; GEOMETRY; NANOSTRUCTURES; DOT;
D O I
10.1142/S0217979218501382
中图分类号
O59 [应用物理学];
学科分类号
摘要
Within the framework of effective-mass envelope-function theory, the ground state binding energy of a hydrogenic donor impurity is calculated in the InGaAsP/InP concentric double quantum rings (CDQRs) using the plane wave method. The effects of geometry, impurity position, external electric field and alloy composition on binding energy are considered. It is shown that the peak value of the binding energy appears in two rings with large gap as the donor impurity moves along the radial direction. The binding energy reaches the peak value at the center of ring height when the donor impurity moves along the axial direction. The binding energy shows nonlinear variation with the increase of ring height. With the external electric field applied along the z-axis, the binding energy of the donor impurity located at z(i) >= 0 decreases while that located at z(i) < 0 increases. In addition, the binding energy decreases with increasing Ga composition, but increases with the increasing As composition.
引用
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页数:11
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