Spin-orbit mixing in III-V semiconductors at the I" point

被引：1

作者：

Dymnikov, V. D. ^{[1
]}

Konstantinov, O. V. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

PHYSICS OF THE SOLID STATE | 2009年 / 51卷 / 04期

关键词：

GENERALIZED MOMENTUM OPERATOR; MATRIX-ELEMENTS; BAND-STRUCTURE; GAMMA-POINT; ANTIMONIDE; RULES; HOLE;

D O I：

10.1134/S1063783409040064

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The consequences of the theory of spin-orbit mixing in III-V semiconductors at the I" point have been analyzed within the five-band model for the first time. A formula that describes the optical matrix element relating the I"(7) and I"(8) bands and expresses it through the known Luttinger parameter q is derived. Until recently, it was believed that this optical matrix element is equal to zero and that the corresponding transition is forbidden. The role of this transition in the experiment on photon absorption by free holes in the p-GaSb compound is discussed.

引用

页码：690 / 697

页数：8

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