Effects of HNO3 molecular doping in graphene/Si Schottky barrier solar cells

被引：0
作者：
Lancellotti, L. [1 ]
Bobeico, E. [1 ]
Capasso, A. [2 ]
Della Noce, M. [1 ]
Dikonimos, T. [2 ]
Lisi, N. [2 ]
Veneri, P. Delli [1 ]
机构：
[1] ENEA, Portici Res Ctr, UTTP, MDB,Mat & Devices, Portici, Italy
[2] ENEA, Casaccia Res Ctr, UTTMAT, SUP,Mat, Rome, Italy
来源：
2014 FOTONICA AEIT ITALIAN CONFERENCE ON PHOTONICS TECHNOLOGIES | 2014年
关键词：
graphene; solar cell; Schottky barrier; chemical doping;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Schottky barrier solar cells based on graphene/nsilicon heterojunction have been fabricated and characterized and the effect of graphene molecular doping by HNO3 on the solar cells performances have been analyzed. Different doping conditions and thermal annealing processes have been tested to asses and optimize the stability of the devices. The PCE of the cells increases after the treatment by HNO3 and reaches 5% in devices treated at 200 degrees C immediately before the exposition to the oxidant. Up to now our devices retain about 80% of efficiency over a period of two weeks, which represents a good stability result for similar devices.
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页数：3
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