Recombination dynamics in InGaN/GaN quantum wells: role of the piezoelectric field versus carrier localization

被引：2

作者：

Vinattieri, A ^{[1
]}

Colocci, M ^{[1
]}

Rossi, F ^{[1
]}

Ferrari, C ^{[1
]}

Armani, N ^{[1
]}

Salviati, G ^{[1
]}

Reale, A ^{[1
]}

Di Carlo, A ^{[1
]}

Lugli, P ^{[1
]}

Grillo, V ^{[1
]}

机构：

[1] Univ Florence, Dipartimento Fis, INFM, LENS, I-50019 Sesto Fiorentino, Italy

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 1, NO 6 | 2004年 / 1卷 / 06期

关键词：

D O I：

10.1002/pssc.200304076

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present an experimental investigation of InxGa1-xN/GaN multiple quantum well structures, with well widths ranging between 10 and 40 A and an indium content 0.03 < x < 0.07. Given such values, both the electric built-in field and localization due to potential fluctuation affect the carrier dynamics. We will show that, by means of time-integrated, time-resolved photoluminescence spectra and cathodoluminescence experiments, different processes affecting the recombination dynamics can be evidenced. A comparison with theoretical simulations of the carrier dynamics provides a nice agreement with experiments. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1397 / 1402

页数：6

共 12 条

[1] Spontaneous polarization and piezoelectric field in GaN/Al0.15Ga0.85N quantum wells:: Impact on the optical spectra
Cingolani, R
Botchkarev, A
Tang, H
Morkoc, H
Traetta, G
Coli, G
Lomascolo, M
Di Carlo, A
Della Sala, F
Lugli, P
[J]. PHYSICAL REVIEW B, 2000, 61 (04): : 2711 - 2715
[2] Mesoscopic-capacitor effect in GaN/AlxGa1-xN quantum wells:: Effects on the electronic states -: art. no. 235305
Di Carlo, A
Reale, A
Lugli, P
Traetta, G
Lomascolo, M
Passaseo, A
Cingolani, R
Bonfiglio, A
Berti, M
Napolitani, E
Natali, M
Sinha, SK
Drigo, AV
Vinattieri, A
Colocci, M
[J]. PHYSICAL REVIEW B, 2001, 63 (23)
[3] The red σ2/kT spectral shift in partially disordered semiconductors
Eliseev, PG
[J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) : 5404 - 5415
[4] Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes
Lefebvre, P
Taliercio, T
Morel, A
Allègre, J
Gallart, M
Gil, B
Mathieu, H
Damilano, B
Grandjean, N
Massies, J
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (11) : 1538 - 1540
[5] High internal electric field in a graded-width InGaN/GaN quantum well:: Accurate determination by time-resolved photoluminescence spectroscopy
Lefebvre, P
Morel, A
Gallart, M
Taliercio, T
Allègre, J
Gil, B
Mathieu, H
Damilano, B
Grandjean, N
Massies, J
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (09) : 1252 - 1254
[6] Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys
Li, Q
Xu, SJ
Cheng, WC
Xie, MH
Tong, SY
Che, CM
Yang, H
[J]. APPLIED PHYSICS LETTERS, 2001, 79 (12) : 1810 - 1812
[7] Exciton localization and the Stokes' shift in InGaN epilayers
Martin, RW
Middleton, PG
O'Donnell, KP
Van der Stricht, W
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (02) : 263 - 265
[8] Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems
Morel, A
Lefebvre, P
Kalliakos, S
Taliercio, T
Bretagnon, T
Gil, B
[J]. PHYSICAL REVIEW B, 2003, 68 (04)
[9] Comprehensive description of the dynamical screening of the internal electric fields of AlGaN/GaN quantum wells in time-resolved photoluminescence experiments
Reale, A
Massari, G
Di Carlo, A
Lugli, P
Vinattieri, A
Alderighi, D
Colocci, M
Semond, F
Grandjean, N
Massies, J
[J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) : 400 - 409
[10] ROSSI F, 2003, IN PRESS MICROSCOPY

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