Growth of Highly (100)-Oriented SrTiO3 Thin Films on Si(111) Substrates Without Buffer Layer

被引：3

作者：

Panomsuwan, Gasidit ^{[1
]}

Takai, Osamu ^{[2
]}

Saito, Nagahiro ^{[1
,3
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Mat Phys & Energy Engn, Nagoya, Aichi 4648603, Japan

[2] Kanto Gakuin Univ, Mat & Surface Engn Res Inst, Yokohama, Kanagawa 2360004, Japan

[3] Nagoya Univ, Green Mobil Collaborat Res Ctr, Nagoya, Aichi 4648603, Japan

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2014年 / 97卷 / 05期

关键词：

MEMORY APPLICATIONS; SILICON; INTERFACE; OXIDE;

D O I：

10.1111/jace.12912

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The SrTiO3 (STO) thin films were directly grown on Si(111) substrates without buffer layer by an electron-cyclotron-resonance ion beam sputter deposition. The growth temperature was varied from 700 degrees C to 850 degrees C, while other parameters were kept unchanged. X-ray structural analysis demonstrates that the growth temperature has a strong influence in tuning degree of (100) orientation. The STO film grown at 800 degrees C is found to be the highest degree of (100) orientation (98%) and a strong (100) fiber texture. For the surface morphology, the development of plate-shaped grains reveals a good correlation with the change in the degree of (100) orientation. Moreover, the leakage current-voltage characteristics of the Au/STO/Si(111) metal-insulator-semiconductor capacitors are investigated and discussed in considerable detail.

引用

收藏

页码：1383 / 1385

页数：3

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