PAMBE growth and in-situ characterisation of clean (2 x 2) and (√3 x √3) R30° reconstructed InN(0001) thin films

被引：19
作者：
Himmerlich, M.
Eisenhardt, A.
Schaefer, J. A.
Krischok, S. [1 ]
机构：
[1] TU Ilmenau, Inst Phys, D-98684 Ilmenau, Germany
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2009年 / 246卷 / 06期
关键词：
ELECTRONIC-PROPERTIES; SURFACE-COMPOSITION; NONPOLAR SURFACES; WURTZITE INN; POLAR; ALLOYS; GAN;
D O I：
10.1002/pssb.200880817
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The surface properties of thin InN(0001) films grown by plasma assisted molecular beam epitaxy (PAMBE) were charecterised. Two stable surface reconstructions (a (2 x 2) and a (root 3 x root 3) R30 degrees) are identified which develop depending on the used preparation conditions. The structural, compositional and electronic surface properties were analysed insitu using reflection high energy electron diffraction (RHEED) and photoelectron spectroscopy (PFS). From the absence of surface contaminants as well as excess indium-it can be concluded that these superstructures are formed by single adatom layers.
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页码：1173 / 1176
页数：4
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