Local Ion Irradiation-Induced Resistive Threshold and Memory Switching in Nb2O5/NbOx Films

被引：50

作者：

Wylezich, Helge ^{[1
]}

Maehne, Hannes ^{[1
]}

Rensberg, Jura ^{[2
]}

Ronning, Carsten ^{[2
]}

Zahn, Peter ^{[3
]}

Slesazeck, Stefan ^{[1
]}

Mikolajick, Thomas ^{[1
,4
]}

机构：

[1] NaMLab gGmbH, D-01187 Dresden, Germany

[2] Univ Jena, Inst Solid State Phys, D-07743 Jena, Germany

[3] Helmholtz Zentrum Dresden Rossendorf, D-01328 Dresden, Germany

[4] Tech Univ Dresden, Fac Elect & Comp Engn, Inst Semicond & Microsyst, Chair Nanoelect Mat, D-01187 Dresden, Germany

来源：

ACS APPLIED MATERIALS & INTERFACES | 2014年 / 6卷 / 20期

关键词：

resistive switching; threshold switching; niobium oxide; ion irradiation; NIOBIUM;

D O I：

10.1021/am5021149

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Resistive switching devices with a Nb2O5/NbOx bilayer stack combine threshold and memory switching. Here we present a new fabrication method to form such devices. Amorphous Nb2O5 layers were treated by a krypton irradiation. Two effects are found to turn the oxide partly into a metallic NbOx layer: preferential sputtering and interface mixing. Both effects take place at different locations in the material stack of the device; preferential sputtering affects the surface, while interface mixing appears at the bottom electrode. To separate both effects, devices were irradiated at different energies (4, 10, and 35 keV). Structural changes caused by ion irradiation are studied in detail. After successful electroforming, the devices exhibit the desired threshold switching. In addition, the choice of the current compliance defines whether a memory effect adds to the device. Findings from electrical characterization disclose a model of the layer modification during irradiation.

引用

页码：17474 / 17480

页数：7

共 22 条

[1]

[Anonymous], 2011, 2011 3 IEEE INT MEM, DOI DOI 10.1109/IMW.2011.5873225

[2] Coexistence of bi-stable memory and mono-stable threshold resistance switching phenomena in amorphous NbOx films [J].