Crystal growth within a phase change memory cell

被引:206
作者
Sebastian, Abu [1 ]
Le Gallo, Manuel [1 ]
Krebs, Daniel [1 ]
机构
[1] IBM Res Zurich, CH-8803 Ruschlikon, Switzerland
关键词
THIN-FILMS; GLASS-TRANSITION; POLYMER MELTS; COOLING RATE; CRYSTALLIZATION; THRESHOLD; TEMPERATURE; RESISTANCE; VISCOSITY; DYNAMICS;
D O I
10.1038/ncomms5314
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
In spite of the prominent role played by phase change materials in information technology, a detailed understanding of the central property of such materials, namely the phase change mechanism, is still lacking mostly because of difficulties associated with experimental measurements. Here, we measure the crystal growth velocity of a phase change material at both the nanometre length and the nanosecond timescale using phase-change memory cells. The material is studied in the technologically relevant melt-quenched phase and directly in the environment in which the phase change material is going to be used in the application. We present a consistent description of the temperature dependence of the crystal growth velocity in the glass and the super-cooled liquid up to the melting temperature.
引用
收藏
页数:9
相关论文
共 48 条
[1]   THRESHOLD SWITCHING IN CHALCOGENIDE-GLASS THIN-FILMS [J].
ADLER, D ;
SHUR, MS ;
SILVER, M ;
OVSHINSKY, SR .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3289-3309
[2]   THE INFLUENCE OF THE COOLING RATE ON THE GLASS-TRANSITION AND THE GLASSY STATE IN 3-DIMENSIONAL DENSE POLYMER MELTS - A MONTE-CARLO STUDY [J].
BASCHNAGEL, J ;
BINDER, K ;
WITTMANN, HP .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (11) :1597-1618
[3]   Internal Temperature Extraction in Phase-Change Memory Cells During the Reset Operation [J].
Boniardi, Mattia ;
Redaelli, Andrea ;
Tortorelli, Innocenzo ;
Pellizzer, Fabio ;
Pirovano, Agostino .
IEEE ELECTRON DEVICE LETTERS, 2012, 33 (04) :594-596
[4]   Novel lithography-independent pore phase change memory [J].
Breitwisch, M. ;
Nirschl, T. ;
Chen, C. F. ;
Zhu, Y. ;
Lee, M. H. ;
Lamorey, M. ;
Burr, G. W. ;
Joseph, E. ;
Schrott, A. ;
Philipp, J. B. ;
Cheek, R. ;
Happ, T. D. ;
Chen, S. H. ;
Zaidi, S. ;
Flaitz, P. ;
Bruley, J. ;
Dasaka, R. ;
Rajendran, B. ;
Rossnagel, S. ;
Yang, M. ;
Chen, Y. C. ;
Bergmann, R. ;
Lung, H. L. ;
Lam, C. .
2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2007, :100-+
[5]   Cooling rate dependence of the glass transition temperature of polymer melts: Molecular dynamics study [J].
Buchholz, J ;
Paul, W ;
Varnik, F ;
Binder, K .
JOURNAL OF CHEMICAL PHYSICS, 2002, 117 (15) :7364-7372
[6]   Observation and modeling of polycrystalline grain formation in Ge2Sb2Te5 [J].
Burr, Geoffrey W. ;
Tchoulfian, Pierre ;
Topuria, Teya ;
Nyffeler, Clemens ;
Virwani, Kumar ;
Padilla, Alvaro ;
Shelby, Robert M. ;
Eskandari, Mona ;
Jackson, Bryan ;
Lee, Bong-Sub .
JOURNAL OF APPLIED PHYSICS, 2012, 111 (10)
[7]   Phase change memory technology [J].
Burr, Geoffrey W. ;
Breitwisch, Matthew J. ;
Franceschini, Michele ;
Garetto, Davide ;
Gopalakrishnan, Kailash ;
Jackson, Bryan ;
Kurdi, Buelent ;
Lam, Chung ;
Lastras, Luis A. ;
Padilla, Alvaro ;
Rajendran, Bipin ;
Raoux, Simone ;
Shenoy, Rohit S. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (02) :223-262
[8]   Logic Computation in Phase Change Materials by Threshold and Memory Switching [J].
Cassinerio, M. ;
Ciocchini, N. ;
Ielmini, D. .
ADVANCED MATERIALS, 2013, 25 (41) :5975-5980
[9]  
Chen C.-F., 2009, Memory Workshop, P1
[10]   Modeling of Threshold-Voltage Drift in Phase-Change Memory (PCM) Devices [J].
Ciocchini, Nicola ;
Cassinerio, Marco ;
Fugazza, Davide ;
Ielmini, Daniele .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (11) :3084-3090