3D Coupled Electro-Thermal FinFET Simulations Including the Fin Shape Dependence of the Thermal Conductivity

被引：0

作者：

Wang, L. ^{[1
]}

Brown, A. R. ^{[2
]}

Nedjalkov, M. ^{[3
]}

Alexander, C. ^{[2
]}

Cheng, B. ^{[1
,2
]}

Millar, C. ^{[2
]}

Asenov, A. ^{[1
,2
]}

机构：

[1] Univ Glasgow, Sch Engn, Glasgow, Lanark, Scotland

[2] Gold Stand Simulat Ltd, Glasgow, Lanark, Scotland

[3] TU Wien, Inst Microelect, A-1040 Vienna, Austria

来源：

2014 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) | 2014年

关键词：

FinFET; thermal effects; self-heating effects; thermal conductivity; SOI;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A thermal simulation module, based on the solution of the coupled Heat Flow, Poisson, and Current Continuity Equations, has been developed and implemented in the 'atomistic' simulator GARAND to investigate the impact of self heating on FinFET DC operation. A progressive study of coupled electro-thermal simulation for FinFETs is presented. A new approximate formula for the reduced thermal conductivity due to phonon-boundary scattering in the fin is presented which considers both the fin height and the fin width, and is both position and temperature dependent. Simulation results for a SOI FinFET and a bulk FinFET example are compared and analysed.

引用

页码：269 / 272

页数：4

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