Giant piezoresistive gauge factor in vein-membrane/graphene sensors with a wide linear working range

被引:14
|
作者
Li, Zongheng [1 ]
Ning, Huiming [1 ,2 ,3 ]
Hu, Ning [4 ,5 ]
Li, Yuanqing [1 ]
Qiao, Long [1 ]
机构
[1] Chongqing Univ, Coll Aerosp Engn, Chongqing 400044, Peoples R China
[2] Chongqing Key Lab Heterogeneous Mat Mech, Chongqing 400044, Peoples R China
[3] State Key Lab Adv Design & Mfg Vehicle Body, Changsha 410044, Peoples R China
[4] Hebei Univ Technol, State Key Lab Reliabil & Intelligence Elect Equip, Tianjin 300401, Peoples R China
[5] Hebei Univ Technol, Sch Mech Engn, Tianjin 300401, Peoples R China
关键词
STRAIN SENSOR; HYDROTHERMAL CARBONIZATION; NANOCOMPOSITE AEROGEL; GRAPHENE; COMPOSITE; CONSTANTS; DYE;
D O I
10.1039/d0tc02930k
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Here, a piezoresistive sensor was fabricated by combining graphene and the veins of Magnolia henryi. The sensor displayed a high sensitivity, with a gauge factor of 238.09, and a wide and appropriate linear working range, with a linear coefficient of 99.4% when subjected to mechanical strain from 0% to 12%. It also showed a long-term repeatability of 0.0078% per second when subjected to 1000 cycles of periodic mechanical strain. The resistance only fluctuated between 154 ohm and 161 ohm when the environmental temperature changed from 30 degrees C to 70 degrees C. These results show that the multi-level structure of the sensor played a critical role in the piezoresistive mechanism. The performance of the developed sensor was ascribed to the veins' multi-level structure at the microscale and the doping of boron atoms from the aforementioned veins into the graphene crystal structure at the atomic scale, thereby altering the structure of its electronic energy bands and electron density. This introduced holes and formed a p-type semiconductor.
引用
收藏
页码:16957 / 16966
页数:10
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