Synthetic semiconductor diamond electrodes: kinetics of some redox reactions

被引:49
|
作者
Modestov, AD
Evstefeeva, YE
Pleskov, YV
Mazin, VM
Varnin, VP
Teremetskaya, IG
机构
[1] RUSSIAN ACAD SCI,AN FRUMKIN ELECTROCHEM INST,MOSCOW 117071,RUSSIA
[2] RUSSIAN ACAD SCI,INST PHYS CHEM,MOSCOW 117915,RUSSIA
来源
JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1997年 / 431卷 / 02期
基金
俄罗斯基础研究基金会;
关键词
diamond; thin-film electrodes; linear-sweep voltammetry; impedance spectra; semiconductor electrodes; transfer coefficient; redox reaction; rate constant;
D O I
10.1016/S0022-0728(97)00140-X
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Linear-sweep voltammograms were recorded on boron-doped diamond thin-film electrodes in K3Fe(CN)(6), K4Fe(CN)(6), quinone, and hydroquinone solutions; transfer coefficients and rate constants for anodic and cathodic reactions were determined. The reaction rates were compared to the diamond samples' electrical characteristics measured by the impedance spectroscopy techniques. The polarization (faradaic) resistance of a redox reaction at its equilibrium potential was shown to be proportional to the specific resistance of diamond samples. Reaction rate constants for the quinone/hydroquinone system appeared to be significantly less than those for the Fe(CN)(3-/4-)(6) system. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:211 / 218
页数:8
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