Direct Observation of Dual-Filament Switching Behaviors in Ta2O5-Based Memristors

被引：98

作者：

Chang, Chia-Fu ^{[1
]}

Chen, Jui-Yuan ^{[1
]}

Huang, Chun-Wei ^{[1
]}

Chiu, Chung-Hua ^{[1
]}

Lin, Ting-Yi ^{[1
]}

Yeh, Ping-Hung ^{[2
]}

Wu, Wen-Wei ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan

[2] Tamkang Univ, Dept Phys, 151 Ying Chuan Rd, Taipei 251, Taiwan

来源：

SMALL | 2017年 / 13卷 / 15期

关键词：

ELECTROLYTE-BASED RERAM; CONDUCTIVE FILAMENTS; MEMORY DEVICES; OXYGEN-VACANCY; NANOFILAMENT; TRANSFORMATION; MECHANISMS; TRANSITION; EVOLUTION; PROSPECTS;

D O I：

10.1002/smll.201603116

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Researchers selected Ta2O5 as the dielectric layer and Ag as the active electrode to produce Ag/Ta2O5/Pt resistive random access memory (RRAM) Devices. Ag was chosen instead of Cu since the oxidation reaction of Cu easily generated Cu+ and Cu was not an ideal active metal in a Ta2O5 system. The Ag redox reaction was also more stable than that of Cu.

引用

页数：7

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