Correlation of dot size distribution with luminescence and electrical transport of Si quantum dots embedded in SiO2

被引：30

作者：

Lombardo, S

Coffa, S

Bongiorno, C

Spinella, C

Castagna, E

Sciuto, A

Gerardi, C

Ferrari, F

Fazio, B

Privitera, S

机构：

[1] CNR, Ist Nazl Metodol & Tecnol Microelettron, I-95121 Catania, Italy

[2] STMicroelect, Cent Res & Dev, Catania Technol Ctr, I-95121 Catania, Italy

[3] Univ Catania, Dipartmento Fis, I-95129 Catania, Italy

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 69卷

关键词：

Si dots; electrical transport and luminescence; reversible charge storage;

D O I：

10.1016/S0921-5107(99)00290-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the electrical transport and luminescence of Si dots embedded in SiO2. The dots have been obtained by high temperature annealing of silicon rich oxides prepared by chemical vapor deposition. Transmission electron microscopy analysis demonstrates the presence of crystalline Si dots with grain radii down to 1 nm. The data of luminescence and electrical transport appear correlated with the dot size distribution. Moreover, the analysis of the electrical characteristics of metal-oxide-semiconductor capacitors with silicon rich oxide films indicates that such systems may reversibly store charge, thus exhibiting the function of a memory. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：295 / 298

页数：4

共 11 条

[1] THEORETICAL ASPECTS OF THE LUMINESCENCE OF POROUS SILICON [J].