Water-Surface Drag Coating: A New Route Toward High-Quality Conjugated Small-Molecule Thin Films with Enhanced Charge Transport Properties

被引:66
作者
Deng, Wei [1 ]
Xiao, Yanling [1 ]
Lu, Bei [1 ]
Zhang, Liang [1 ]
Xia, Yujian [1 ]
Zhu, Chenhui [2 ]
Zhang, Xiujuan [1 ]
Guo, Jinghua [2 ]
Zhang, Xiaohong [1 ]
Jie, Jiansheng [1 ]
机构
[1] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China
[2] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA
基金
中国国家自然科学基金;
关键词
charge transport; conjugated small‐ molecule thin films; flexible electronics; organic field‐ effect transistors; water‐ surface drag coating; FIELD-EFFECT TRANSISTORS; ORGANIC TRANSISTORS; HIGH-MOBILITY; ELECTRON MOBILITIES; SEMICONDUCTORS; HOLE; CIRCUITS; DYNAMICS; POLARITY; PACKING;
D O I
10.1002/adma.202005915
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Electronic properties of organic semiconductor (OSC) thin films are largely determined by their morphologies and crystallinities. However, solution-processed conjugated small-molecule OSC thin films usually exhibit abundant grain boundaries and impure grain orientations because of complex fluid dynamics during solution coating. Here, a novel methodology, water-surface drag coating, is demonstrated to fabricate high-quality OSC thin films with greatly enhanced charge transport properties. This method utilizes the water surface to alter the evaporation dynamics of solution to enlarge the grain size, and a unique drag-coating process to achieve the unidirectional growth of organic crystals. Using 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (Dif-TES-ADT) as an example, thin films with millimeter-sized single-crystal domains and pure crystallographic orientations are achieved, revealing a significant enhancement (4.7 times) of carrier mobility. More importantly, the resulting film can be directly transferred onto any desired flexible substrates, and flexible transistors based on the Dif-TES-ADT thin films show a mobility as high as 16.1 cm(2) V-1 s(-1), which represents the highest mobility value for the flexible transistors reported thus far. The method is general for the growth of various high-quality OSC thin films, thus opening up opportunities for high-performance organic flexible electronics.
引用
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页数:11
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