Performance comparison of front- and back-illuminated modes of the AlGaN-based p-i-n solar-blind ultraviolet photodetectors

被引：12

作者：

Li, Xiaojing ^{[1
]}

Zhao, Degang ^{[1
]}

Jiang, Desheng ^{[1
]}

Liu, Zongshun ^{[1
]}

Chen, Ping ^{[1
]}

Le, Lingcong ^{[1
]}

Yang, Jing ^{[1
]}

He, Xiaoguang ^{[1
]}

Zhang, Shuming ^{[2
]}

Zhu, Jianjun ^{[2
]}

Wang, Hui ^{[2
]}

Zhang, Baoshun ^{[2
]}

Liu, Jianping ^{[2
]}

Yang, Hui ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2014年 / 32卷 / 03期

基金：

中国国家自然科学基金;

关键词：

LOW-DARK-CURRENT; PHOTODIODES; DETECTORS; GAN;

D O I：

10.1116/1.4871460

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report the comparison of front- and back-illuminated mode operations of Al0.4Ga0.6N positive-intrinsic-negative solar-blind photodetectors (PDs) grown on the double-side polished sapphire substrates by metalorganic chemical vapor deposition. It is shown that the responsivity in back-illumination mode of fabricated PDs can be almost three times as that in front-illumination mode under the same reverse bias. In addition, a wide spectral response between 300 nm and 370 nm is observed, which is not expected for solar-blind PDs in both illumination modes, while the PDs in back-illumination mode have a stronger ability to restrain the long-wavelength response, showing larger solar-blind/ultraviolet rejection ratio than front-illumination mode. The reasons for the performance differences are discussed. (C) 2014 American Vacuum Society.

引用

页数：4

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