The anisotropic distribution of dislocations and tilts in metamorphic GaInAs/AlInAs buffers grown on GaAs substrates with miscut angles toward (111)A

被引：9

作者：

Sun, Yurun ^{[1
,2
]}

Li, Kuilong ^{[1
,2
]}

Dong, Jianrong ^{[1
]}

Zeng, Xulu ^{[1
,2
]}

Yu, Shuzhen ^{[1
]}

Zhao, Yongming ^{[1
]}

Zhao, Chunyu ^{[1
]}

Yang, Hui ^{[1
]}

机构：

[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2014年 / 597卷

基金：

中国国家自然科学基金;

关键词：

Semiconductor; Tilt; Anisotropy; Dislocations; X-ray diffraction; STRAIN RELAXATION; INP; MISORIENTATION; LAYERS;

D O I：

10.1016/j.jallcom.2014.01.206

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The metamorphic GaInAs/AlInAs buffers grown by metal organic chemical vapor deposition (MOCVD) on GaAs substrates with miscut angles toward (111) A exhibit anisotropic properties in the two < 110 > directions. A higher dislocation density is observed along [110] direction for samples with substrate miscuts of 2 degrees and 7 degrees, while along [1 - 10] direction for samples with a substrate miscut of 15 degrees. The different nucleation energies and glide velocities of alpha and beta dislocations contribute to the anisotropic dislocation distribution for the 2 degrees and 7 degrees samples, however, the unequal resolved shear stress (RSS) distribution between different slip systems introduced by the miscut is responsible for the 15 degrees sample. A modified model is proposed to determine the tilt angle of epilayer with respect to the substrates, and the results show that different tilt angles in the two < 110 > directions is mainly attributed to the different strain relaxation in two < 110 > directions caused by the miscut toward (111)A. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：45 / 49

页数：5

共 22 条

[1] THE MEASUREMENT OF THREADING DISLOCATION DENSITIES IN SEMICONDUCTOR CRYSTALS BY X-RAY-DIFFRACTION [J].