Resistance States and Photoluminescence in Anodic Oxide Alumina Films

被引：0
|
作者：
Yalishev, Vadim Sh. [1 ]
Yuldashev, Shavkat U. [2 ]
Kim, Yeon Soo [1 ]
Park, Bae Ho [1 ]
机构：
[1] Konkuk Univ, Sch Phys, Div Quantum Phases & Devices, Seoul 143701, South Korea
[2] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 09期
基金：
瑞典研究理事会;
关键词：
alumina; anodisation; electric resistance; electrical conductivity; electrolytes; photoluminescence; surface morphology; thin films; CURRENT FILAMENTATION; NIO FILMS; THIN-FILM; TRANSITION; INTERFACE; BREAKDOWN;
D O I：
10.1149/1.3158050
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Reproducible resistance switching behaviors induced by the external voltage were investigated in anodic oxide alumina (AOA) thin films. Electric-transport measurements showed that a low resistance state in the Ag/AOA/Al structures might be caused by the formation of the conductive filaments. Switching to a high resistance state occurred due to the rupture of these filaments. Change in the photoluminescence properties of the AOA films depending on the resistance states was observed.
引用
收藏
页码：G47 / G49
页数：3
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