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New extensive MVHR breakdown models
被引:8
作者
:
Ribes, G.
论文数:
0
引用数:
0
h-index:
0
机构:
STMicroelect, 850 Rue Jean Monnet, F-38926 Crolles, France
STMicroelect, 850 Rue Jean Monnet, F-38926 Crolles, France
Ribes, G.
[
1
]
Bruyere, S.
论文数:
0
引用数:
0
h-index:
0
机构:
STMicroelect, 850 Rue Jean Monnet, F-38926 Crolles, France
STMicroelect, 850 Rue Jean Monnet, F-38926 Crolles, France
Bruyere, S.
[
1
]
Roy, D.
论文数:
0
引用数:
0
h-index:
0
机构:
STMicroelect, 850 Rue Jean Monnet, F-38926 Crolles, France
STMicroelect, 850 Rue Jean Monnet, F-38926 Crolles, France
Roy, D.
[
1
]
Denais, M.
论文数:
0
引用数:
0
h-index:
0
机构:
STMicroelect, 850 Rue Jean Monnet, F-38926 Crolles, France
STMicroelect, 850 Rue Jean Monnet, F-38926 Crolles, France
Denais, M.
[
1
]
Roux, J-M.
论文数:
0
引用数:
0
h-index:
0
机构:
STMicroelect, 850 Rue Jean Monnet, F-38926 Crolles, France
STMicroelect, 850 Rue Jean Monnet, F-38926 Crolles, France
Roux, J-M.
[
1
]
Parthasarathy, C.
论文数:
0
引用数:
0
h-index:
0
机构:
STMicroelect, 850 Rue Jean Monnet, F-38926 Crolles, France
STMicroelect, 850 Rue Jean Monnet, F-38926 Crolles, France
Parthasarathy, C.
[
1
]
Huard, V.
论文数:
0
引用数:
0
h-index:
0
机构:
Philips, F-38926 Crolles, France
STMicroelect, 850 Rue Jean Monnet, F-38926 Crolles, France
Huard, V.
[
2
]
Ghibaudo, G.
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS, IMEP, ENSERG, UMR 5531, Grenoble 38016, France
STMicroelect, 850 Rue Jean Monnet, F-38926 Crolles, France
Ghibaudo, G.
[
3
]
机构
:
[1]
STMicroelect, 850 Rue Jean Monnet, F-38926 Crolles, France
[2]
Philips, F-38926 Crolles, France
[3]
CNRS, IMEP, ENSERG, UMR 5531, Grenoble 38016, France
来源
:
2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL
|
2006年
关键词
:
D O I
:
10.1109/RELPHY.2006.251292
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:621 / +
页数:2
相关论文
共 11 条
[1]
Breaking individual chemical bonds via STM-induced excitations
Avouris, P
论文数:
0
引用数:
0
h-index:
0
机构:
RICE UNIV, DEPT PHYS, HOUSTON, TX 77251 USA
Avouris, P
Walkup, RE
论文数:
0
引用数:
0
h-index:
0
机构:
RICE UNIV, DEPT PHYS, HOUSTON, TX 77251 USA
Walkup, RE
Rossi, AR
论文数:
0
引用数:
0
h-index:
0
机构:
RICE UNIV, DEPT PHYS, HOUSTON, TX 77251 USA
Rossi, AR
Akpati, HC
论文数:
0
引用数:
0
h-index:
0
机构:
RICE UNIV, DEPT PHYS, HOUSTON, TX 77251 USA
Akpati, HC
Nordlander, P
论文数:
0
引用数:
0
h-index:
0
机构:
RICE UNIV, DEPT PHYS, HOUSTON, TX 77251 USA
Nordlander, P
Shen, TC
论文数:
0
引用数:
0
h-index:
0
机构:
RICE UNIV, DEPT PHYS, HOUSTON, TX 77251 USA
Shen, TC
Abeln, GC
论文数:
0
引用数:
0
h-index:
0
机构:
RICE UNIV, DEPT PHYS, HOUSTON, TX 77251 USA
Abeln, GC
Lyding, JW
论文数:
0
引用数:
0
h-index:
0
机构:
RICE UNIV, DEPT PHYS, HOUSTON, TX 77251 USA
Lyding, JW
[J].
SURFACE SCIENCE,
1996,
363
(1-3)
: 368
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377
[2]
Aspects of defects in silica related to dielectric breakdown of gate oxides in MOSFETs
Blöchl, PE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Corp, Zurich Res Lab, Res, CH-8803 Ruschlikon, Switzerland
Blöchl, PE
Stathis, JH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Corp, Zurich Res Lab, Res, CH-8803 Ruschlikon, Switzerland
Stathis, JH
[J].
PHYSICA B-CONDENSED MATTER,
1999,
273-4
: 1022
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1026
[3]
CROMWELL, 1966, APPL PHYS LETT, V9, P242
[4]
GIBES G, IRPS 2005, P377
[5]
Kaneta C, 2003, FUJITSU SCI TECH J, V39, P106
[6]
NICOLLIAN PE, IEEE IRPS 2000
[7]
Ribes G, 2004, INT INTEG REL WRKSP, P1
[8]
STHATIS J, 1999, J APPL PHYS, V86
[9]
First-principles theory of inelastic currents in a scanning tunneling microscope
Stokbro, K
论文数:
0
引用数:
0
h-index:
0
机构:
Tech Univ Denmark, Mikroelekt Ctr, DK-2800 Lyngby, Denmark
Stokbro, K
Hu, BYK
论文数:
0
引用数:
0
h-index:
0
机构:
Tech Univ Denmark, Mikroelekt Ctr, DK-2800 Lyngby, Denmark
Hu, BYK
Thirstrup, C
论文数:
0
引用数:
0
h-index:
0
机构:
Tech Univ Denmark, Mikroelekt Ctr, DK-2800 Lyngby, Denmark
Thirstrup, C
Xie, XC
论文数:
0
引用数:
0
h-index:
0
机构:
Tech Univ Denmark, Mikroelekt Ctr, DK-2800 Lyngby, Denmark
Xie, XC
[J].
PHYSICAL REVIEW B,
1998,
58
(12)
: 8038
-
8041
[10]
Modelling considerations and development of upper limits of stress conditions for dielectric breakdown projections
Vollertsen, RP
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, MICROELECT DIV, ESSEX JCT, VT 05452 USA
IBM CORP, MICROELECT DIV, ESSEX JCT, VT 05452 USA
Vollertsen, RP
Abadeer, WW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, MICROELECT DIV, ESSEX JCT, VT 05452 USA
IBM CORP, MICROELECT DIV, ESSEX JCT, VT 05452 USA
Abadeer, WW
[J].
MICROELECTRONICS RELIABILITY,
1996,
36
(7-8)
: 1019
-
1031
←
1
2
→
共 11 条
[1]
Breaking individual chemical bonds via STM-induced excitations
Avouris, P
论文数:
0
引用数:
0
h-index:
0
机构:
RICE UNIV, DEPT PHYS, HOUSTON, TX 77251 USA
Avouris, P
Walkup, RE
论文数:
0
引用数:
0
h-index:
0
机构:
RICE UNIV, DEPT PHYS, HOUSTON, TX 77251 USA
Walkup, RE
Rossi, AR
论文数:
0
引用数:
0
h-index:
0
机构:
RICE UNIV, DEPT PHYS, HOUSTON, TX 77251 USA
Rossi, AR
Akpati, HC
论文数:
0
引用数:
0
h-index:
0
机构:
RICE UNIV, DEPT PHYS, HOUSTON, TX 77251 USA
Akpati, HC
Nordlander, P
论文数:
0
引用数:
0
h-index:
0
机构:
RICE UNIV, DEPT PHYS, HOUSTON, TX 77251 USA
Nordlander, P
Shen, TC
论文数:
0
引用数:
0
h-index:
0
机构:
RICE UNIV, DEPT PHYS, HOUSTON, TX 77251 USA
Shen, TC
Abeln, GC
论文数:
0
引用数:
0
h-index:
0
机构:
RICE UNIV, DEPT PHYS, HOUSTON, TX 77251 USA
Abeln, GC
Lyding, JW
论文数:
0
引用数:
0
h-index:
0
机构:
RICE UNIV, DEPT PHYS, HOUSTON, TX 77251 USA
Lyding, JW
[J].
SURFACE SCIENCE,
1996,
363
(1-3)
: 368
-
377
[2]
Aspects of defects in silica related to dielectric breakdown of gate oxides in MOSFETs
Blöchl, PE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Corp, Zurich Res Lab, Res, CH-8803 Ruschlikon, Switzerland
Blöchl, PE
Stathis, JH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Corp, Zurich Res Lab, Res, CH-8803 Ruschlikon, Switzerland
Stathis, JH
[J].
PHYSICA B-CONDENSED MATTER,
1999,
273-4
: 1022
-
1026
[3]
CROMWELL, 1966, APPL PHYS LETT, V9, P242
[4]
GIBES G, IRPS 2005, P377
[5]
Kaneta C, 2003, FUJITSU SCI TECH J, V39, P106
[6]
NICOLLIAN PE, IEEE IRPS 2000
[7]
Ribes G, 2004, INT INTEG REL WRKSP, P1
[8]
STHATIS J, 1999, J APPL PHYS, V86
[9]
First-principles theory of inelastic currents in a scanning tunneling microscope
Stokbro, K
论文数:
0
引用数:
0
h-index:
0
机构:
Tech Univ Denmark, Mikroelekt Ctr, DK-2800 Lyngby, Denmark
Stokbro, K
Hu, BYK
论文数:
0
引用数:
0
h-index:
0
机构:
Tech Univ Denmark, Mikroelekt Ctr, DK-2800 Lyngby, Denmark
Hu, BYK
Thirstrup, C
论文数:
0
引用数:
0
h-index:
0
机构:
Tech Univ Denmark, Mikroelekt Ctr, DK-2800 Lyngby, Denmark
Thirstrup, C
Xie, XC
论文数:
0
引用数:
0
h-index:
0
机构:
Tech Univ Denmark, Mikroelekt Ctr, DK-2800 Lyngby, Denmark
Xie, XC
[J].
PHYSICAL REVIEW B,
1998,
58
(12)
: 8038
-
8041
[10]
Modelling considerations and development of upper limits of stress conditions for dielectric breakdown projections
Vollertsen, RP
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, MICROELECT DIV, ESSEX JCT, VT 05452 USA
IBM CORP, MICROELECT DIV, ESSEX JCT, VT 05452 USA
Vollertsen, RP
Abadeer, WW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, MICROELECT DIV, ESSEX JCT, VT 05452 USA
IBM CORP, MICROELECT DIV, ESSEX JCT, VT 05452 USA
Abadeer, WW
[J].
MICROELECTRONICS RELIABILITY,
1996,
36
(7-8)
: 1019
-
1031
←
1
2
→