High-performance nanoporous silicon-based photodetectors

被引：9

作者：

Thahe, Asad A. ^{[1
,2
]}

Bakhtiar, Hazri ^{[1
]}

Bidin, Noriah ^{[2
]}

Hassan, Z. ^{[3
]}

Qaeed, M. A. ^{[4
]}

Ramizy, Asmiet ^{[5
]}

Talib, Zainal A. ^{[6
]}

Ahmed, Naser M. ^{[3
]}

Omar, Khalid ^{[7
]}

Alciaraghuli, Hasan ^{[8
]}

Husham, M. ^{[9
]}

Allam, Nageh K. ^{[10
]}

机构：

[1] Univ Teknol Malaysia, Fac Sci, Phys Dept, Johor Baharu 81310, Malaysia

[2] Univ Teknol Malaysia, Inst Ibnu Sina, Laser Ctr, Skudai 81310, Johor, Malaysia

[3] USM, Inst Nano Optoelect Res & Technol, Gelugor, Penang, Malaysia

[4] Hodeidah Univ, Al Hodeidah, Yemen

[5] Anbar Univ, Dept Phys, Anbar, Iraq

[6] Univ Putra Malaysia, Fac Sci, Dept Phys, Serdang 43400, Selangor, Malaysia

[7] Univ Nizwa, Natl Chair Mat Sci & Met, POB 33,PC 616,Birkat Al Mouz, Nizwa, Oman

[8] Univ Technol Malaysia, Fac Elect Engn, Mech & Automat Control Dept, Skudai 81310, Malaysia

[9] Univ Putra Malaysia, Inst Adv Technol ITMA, Serdang 43400, Malaysia

[10] Amer Univ Cairo, Sch Sci & Engn, Energy Mat Lab, New Cairo 11835, Egypt

来源：

OPTIK | 2018年 / 168卷

关键词：

Porous silicon; Etching time; Electrical properties; Photodetector; POROUS SILICON; OPTICAL-PROPERTIES; FILMS; MORPHOLOGY; GROWTH;

D O I：

10.1016/j.ijleo.2018.04.084

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A series of porous silicon (PSi) samples was prepared using photoelectrochemical etching (PECE) method with optimum current density of 45 mA/cm(2). The as-prepared PSi samples were characterized to determine the influence of the etching time (15, 25 and 30 min) on their morphology and electrical properties. The percentage of porosity was estimated via gravimetric analysis. The band gap of the fabricated PSi was approximate to 2.22 eV. Upon their use to fabricate metal-semiconductor-metal (MSM) ultraviolet photodetectors (UVPD), the fabricated PSi revealed excellent stability and reliability under repetitive shots at 530 nm. Furthermore, very fast rise time (approximate to 0.28 s) was obtained at a bias of 1 V under visible light (530 nm) illumination. (C) 2018 Elsevier GmbH. All rights reserved.

引用

页码：424 / 431

页数：8

共 21 条

[1] Abd HR, 2013, INT J ELECTROCHEM SC, V8, P11461
[2] High sensitivity of palladium on porous silicon MSM photodetector
Abd Rahim, A. F.
Hashim, M. R.
Ali, N. K.
[J]. PHYSICA B-CONDENSED MATTER, 2011, 406 (04) : 1034 - 1037
[3] Enhancing photoresponse time of low cost Pd/ZnO nanorods prepared by thermal evaporation techniques for UV detection
Abdulgafour, H. I.
Hassan, Z.
Yam, F. K.
AL-Heuseen, K.
Yusof, Y.
[J]. APPLIED SURFACE SCIENCE, 2011, 258 (01) : 461 - 465
[4] Basu S, 2011, CRYSTALLINE SILICON - PROPERTIES AND USES, P1, DOI 10.5772/844
[5] Berger P. R., 1998, GOOGLE PATENTS
[6] Porous silicon: a quantum sponge structure for silicon based optoelectronics
Bisi, O
Ossicini, S
Pavesi, L
[J]. SURFACE SCIENCE REPORTS, 2000, 38 (1-3) : 1 - 126
[7] Electrical properties of Schottky diode Pt/SiC and Pt/porous SiC performed on highly resistif p-type 6H-SiC
Bourenane, K.
Keffous, A.
Nezzal, G.
[J]. VACUUM, 2007, 81 (05) : 663 - 668
[8] Investigation of photoluminescence efficiency of n-type porous silicon by controlling of etching times and applied current densities
Cho, Bomin
Jin, Sunghoon
Lee, Bo-Yeon
Hwang, Minwoo
Kim, Hee-Cheol
Sohn, Honglae
[J]. MICROELECTRONIC ENGINEERING, 2012, 89 : 92 - 96
[9] SEM and HRTEM study of porous silicon -: relationship between fabrication, morphology and optical properties
Dian, J
Macek, A
Niznansky, D
Nemec, I
Vrkoslav, V
Chvojka, T
Jelínek, I
[J]. APPLIED SURFACE SCIENCE, 2004, 238 (1-4) : 169 - 174
[10] Fabrication and characterization of porous silicon layers for applications in optoelectronics
Dubey, R. S.
Gautam, D. K.
[J]. OPTICAL AND QUANTUM ELECTRONICS, 2009, 41 (03) : 189 - 201

← 1 2 3 →