Electrical characterization of SrTiO3 thin films grown on Nb-doped SrTiO3 single crystals

被引：27

作者：

Morito, K

Suzuki, T

Sekiguchi, S

Okushi, H

Fujimoto, M

机构：

[1] Taiyo Yuden Co Ltd, Haruna, Gunma 3703347, Japan

[2] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 01期

关键词：

thin film; SrTiO3; helicon sputtering; space charge layer; capacitance;

D O I：

10.1143/JJAP.39.166

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SrTiO3(100) films homoepitaxially grown on Nb-doped SrTiO3(100) substrates with various Nb concentrations and SrTiO3(111) films epitaxialy grown on the [111]-oriented Pt thin-film electrode formed on SiO2/Si substrates with Ta buffer layers were prepared by the helicon sputtering method. After the top Pt electrode formation, the obtained Pt/SrTiO3/SrTiO3:Nb metal-insulator-semiconductor (MIS) capacitors and Pt/SrTiO3/Pt/Ta/SiO2/Si metal-insulator-metal (MIM) capacitors were electrically evaluated by current versus bias voltage characteristic (I-V) and capacitance versus bias voltage characteristic (C-V) measurements to clarify the specific features of the SrTiO3/SrTiO3:Nb interface compared with the SrTiO3/Pt interface. The existence of a space charge layer at the SrTiO3/SrTiO3:Nb interface was clearly characterized.

引用

页码：166 / 171

页数：6

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