Performance Evaluation of SiC Power MOSFETs for High-Temperature Applications

被引：0

作者：

Chen, Zheng ^{[1
]}

Yao, Yiying ^{[2
]}

Danilovic, Milisav ^{[1
]}

Boroyevich, Dushan ^{[1
]}

机构：

[1] Virginia Polytech Inst & State Univ, Bradley Dept Elect & Comp Engn, CPES, Blacksburg, VA 24061 USA

[2] State Univ Blacksburg, Virginia Polytechn Inst, Dept Mat Sci & Engn, Blacksburg, VA 24061 USA

来源：

2012 15TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (EPE/PEMC) | 2012年

关键词：

SiC MOSFET; high-temperature; device characterization; gate oxide reliability; DEPENDENT-DIELECTRIC-BREAKDOWN; RELIABILITY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the high-temperature performance of the commercial SiC power MOSFETs has been extensively evaluated beyond 125 degrees C - the maximum junction temperature according to the datasheet. Both the static and switching characteristics have been measured under various temperatures up to 200 degrees C. The results show the superior electrical performance of the SiC MOSFETs for high-temperature operation. Meanwhile, the gate biasing and gate switching tests have also been conducted to test the gate oxide reliability of these devices under elevated temperatures. The test results reveal the degradation in the device characteristics under high temperature and different gate voltage conditions, which exhibit the trade-off between the performance and the reliability of SiC MOSFETs for high-temperature applications.

引用

页数：9

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