Finding the Lost Open-Circuit Voltage in Polymer Solar Cells by UV-Ozone Treatment of the Nickel Acetate Anode Buffer Layer

被引:35
作者
Wang, Fuzhi [1 ]
Sun, Gang [1 ]
Li, Cong [1 ]
Liu, Jiyan [3 ]
Hu, Siqian [3 ]
Zheng, Hua [4 ]
Tan, Zhan'ao [1 ]
Li, Yongfang [2 ]
机构
[1] North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing Key Lab Energy Secur & Clean Utilizat, Beijing 102206, Peoples R China
[2] Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 100190, Peoples R China
[3] Jianghan Univ, Key Lab Optoelect Chem Mat & Devices, Minist Educ, Wuhan 430056, Peoples R China
[4] Wuhan Univ Technol, Sch Chem Engn, Wuhan 430070, Peoples R China
关键词
polymer solar cells; anode buffer layer; nickel acetate; UV-ozone treatment; HOLE-COLLECTION LAYER; POWER-CONVERSION EFFICIENCY; OXIDE INTERFACIAL LAYER; EXTRACTION LAYER; LOW-TEMPERATURE; PHOTOVOLTAIC PROPERTIES; ORGANIC PHOTOVOLTAICS; CHARGE-TRANSPORT; ITO ELECTRODE; THIN-FILMS;
D O I
10.1021/am5017705
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Efficient polymer solar cells (PSCs) with enhanced open-circuit voltage (V-oc) are fabricated by introducing solution-processed and UV-ozone (UVO)-treated nickel acetate (O-NiAc) as an anode buffer layer. According to X-ray photoelectron spectroscopy data, NiAc partially decomposed to NiOOH during the UVO treatment. NiOOH is a dipole species, which leads to an increase in the work function (as confirmed by ultraviolet photoemission spectroscopy), thus benefitting the formation of ohmic contact between the anode and photoactive layer and leading to increased V-oc. In addition, the UVO treatment improves the wettability between the substrate and solvent of the active layer, which facilitates the formation of an upper photoactive layer with better morphology. Further, the O-NiAc layer can decrease the series resistance (R-s) and increase the parallel resistance (R-p) of the devices, inducing enhanced V-oc in comparison with the as-prepared NiAc-buffered control devices without UVO treatment. For PSCs based on the P3HT:PCBM system, V-oc increases from 0.50 to 0.60 V after the NiAc buffer layer undergoes UVO treatment. Similarly, in the P3HT:ICBA system, the V-oc value of the device with a UVO-treated NiAc buffer layer increases from 0.78 to 0.88 V, showing an enhanced power conversion efficiency of 6.64%.
引用
收藏
页码:9458 / 9465
页数:8
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