Photosensitivity Study of Metal-Semiconductor-Metal Photodetector Based on Chemical Vapor Deposited Monolayer MoS2

Monolayer molybdenum disulfide (MoS2) is an emerging two-dimensional material beyond graphene, which could potentially be applicable to lightweight, flexible optoelectronic device. In this study, we have demonstrated a planar metal-semiconductor-metal (MSM) photodetectors based on large area monolayer MoS2. The monolayer MoS2 was grown via chemical vapor deposition method, showing excellent structural and optical properties. The current voltage measurement was characterized at various monochromatic lights in visible spectrum. The device exhibited good responsivity similar to 7.7 mANV for wavelength of similar to 470 nm, which is relatively comparative to mechanical exfoliated monolayer MoS2 based photodetectors. Additionally, the photoresponse measurement showed that the rise/fall time was about 1/0.7 s.