Photosensitivity Study of Metal-Semiconductor-Metal Photodetector Based on Chemical Vapor Deposited Monolayer MoS2

被引：9
作者：
Le, Chinh Tam
Senthilkumar, Velusamy
Kim, Yong Soo [1 ]
机构：
[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2015年 / 15卷 / 10期
关键词：
Monolayer; MoS2; Chemical Vapor Deposition; Photodetector; FEW-LAYER MOS2; GRAIN-BOUNDARIES; ATOMIC LAYERS; LARGE-AREA; GROWTH;
D O I：
10.1166/jnn.2015.11255
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Monolayer molybdenum disulfide (MoS2) is an emerging two-dimensional material beyond graphene, which could potentially be applicable to lightweight, flexible optoelectronic device. In this study, we have demonstrated a planar metal-semiconductor-metal (MSM) photodetectors based on large area monolayer MoS2. The monolayer MoS2 was grown via chemical vapor deposition method, showing excellent structural and optical properties. The current voltage measurement was characterized at various monochromatic lights in visible spectrum. The device exhibited good responsivity similar to 7.7 mANV for wavelength of similar to 470 nm, which is relatively comparative to mechanical exfoliated monolayer MoS2 based photodetectors. Additionally, the photoresponse measurement showed that the rise/fall time was about 1/0.7 s.
引用
收藏
页码：8133 / 8138
页数：6
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