Preparation and Analysis of Schottky Diodes with Au and Sol-gel-processed ZnO Thin Films

被引：8

作者：

Kim, Kyoungwon ^{[1
,2
]}

Song, Yong-Won ^{[1
]}

Leem, Jaehyeon ^{[1
]}

Lee, Sang Yeol ^{[1
]}

Kim, Sangsig ^{[2
]}

机构：

[1] Korea Inst Sci & Technol, Ctr Energy Mat Res, Seoul 136791, South Korea

[2] Korea Univ, Dept Elect Engn, Inst Nanosci, Seoul 136701, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2009年 / 55卷 / 01期

关键词：

Sol-Get; ZnO; Schottky diode; Thin films; OPTICAL-PROPERTIES; OHMIC CONTACTS; LOW-RESISTANCE;

D O I：

10.3938/jkps.55.140

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We fabricate Schottky diodes with the contact between a sol-gel derived ZnO layer and An that guarantees the expected Schottky contact due to the high work function. The formed single metal Schottky barrier shows characteristics comparable to the barrier formed by alloys. Au is deposited by thermal evaporation on a ZnO thin film that is optimally formed under sol-gel process conditions of a 1-mol zinc acetate concentration and a 3000-rpm coating speed. Possible defects, which can provide deleterious current paths, are minimized by patterning the deposited Au. The I-V curve verifies the formation of a Schottky contact. Measurements showed that the Schottky barrier height and leakage current at -5 V were 0.6 eV and 1 x 10(-12) A, respectively.

引用

页码：140 / 143

页数：4

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