The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer

被引：29

作者：

Jang, Woochool ^{[1
]}

Jeon, Heeyoung ^{[2
]}

Song, Hyoseok ^{[1
]}

Kim, Honggi ^{[2
]}

Park, Jingyu ^{[2
]}

Kim, Hyunjung ^{[2
]}

Jeon, Hyeongtag ^{[1
]}

机构：

[1] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea

[2] Hanyang Univ, Dept Nanoscale Semicond Engn, Seoul 133791, South Korea

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2015年 / 212卷 / 12期

基金：

新加坡国家研究基金会;

关键词：

gate spacers; NH3; plasma; plasma power; remote plasma atomic layer deposition; silicon nitrides; thin films; LAYER; PASSIVATION;

D O I：

10.1002/pssa.201532274

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the effects of NH3 plasma power on characteristics of low-temperature silicon nitride thin films for application of a gate spacer. SiNx thin film was deposited on a Si(100) substrate by remote plasma atomic layer deposition (RPALD) using trisilylamine (TSA) as a Si precursor and NH3 gas as a reactant. NH3 remote plasma was analyzed with optical emission spectroscopy (OES) and it largely consisted of NH and H. As the plasma power increased, more NH and H radicals were generated and a proportion of NH radicals in the plasma increased, which resulted in the slight increase of the high-N content and low-H content in SiNx thin film. The low-H content with nearly stoichiometric SiNx thin films improve etch rate properties. The densities of RPALD SiNx thin film were 2.7 g cm(-3) and almost the same regardless of plasma power. RPALD SiNx thin films showed a low leakage current density of 10(-7)A cm(-2) at 2 MV cm(-1) and a breakdown voltage of approximately 8 MV cm(-1). (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2785 / 2790

页数：6

共 19 条

[1]

[Anonymous], EL DEV M

[2] Reduction of oxide tub isolation stress using a silicon nitride liner [J].

Burkhardt, JJ ;

Cox, JR ;

Fertig, DJ ;

Nelson, GJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (09) :3482-3486

[3] Effects of NH3 plasma passivation on N-channel polycrystalline silicon thin-film transistors [J].

Cheng, HC ;

Wang, FS ;

Huang, CY .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (01) :64-68

[4] Molecular hydrogen formation in hydrogenated silicon nitride [J].

Dekkers, H. F. W. ;

Beaucarne, G. ;

Hiller, M. ;

Charifi, H. ;

Slaoui, A. .

APPLIED PHYSICS LETTERS, 2006, 89 (21)

[5] FORMATION OF NH(A3-PI, C1-PI) RADICALS BY ELECTRON-IMPACT NEAR THRESHOLD [J].

FUKUI, K ;

FUJITA, I ;

KUWATA, K .

JOURNAL OF PHYSICAL CHEMISTRY, 1977, 81 (13) :1252-1257

[6] Atomic Layer Deposition: An Overview [J].

George, Steven M. .

CHEMICAL REVIEWS, 2010, 110 (01) :111-131

[7] Atomic layer controlled deposition of silicon nitride with self-limiting mechanism [J].

Goto, H ;

Shibahara, K ;

Yokoyama, S .

APPLIED PHYSICS LETTERS, 1996, 68 (23) :3257-3259

[8]

Harrison G R, 1939, MIT WAVELENGTH TABLE

[9] Electron-Trap and Hole-Trap Distributions in Metal/Oxide/Nitride/Oxide/Silicon Structures [J].

Ishida, Takeshi ;

Mine, Toshiyuki ;

Hisamoto, Digh ;

Shimamoto, Yasuhiro ;

Yamada, Ren-ichi .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (02) :863-869

[10]

Ito S., 2000, EL DEV M, P241

← 1 2 →