Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

被引：3

作者：

de Coux, P. ^{[1
,2
]}

Bachelet, R. ^{[1
]}

Warot-Fonrose, B. ^{[2
]}

Skumryev, V. ^{[3
,4
]}

Lupina, L. ^{[5
]}

Niu, G. ^{[5
]}

Schroeder, T. ^{[5
]}

Fontcuberta, J. ^{[1
]}

Sanchez, F. ^{[1
]}

机构：

[1] Inst Ciencia Mat Barcelona ICMAB CSIC, Barcelona 08193, Spain

[2] CEMES CNRS, Toulouse 4, France

[3] Inst Catalana Recerca & Estudis Avancats ICREA, Barcelona, Spain

[4] Univ Autonoma Barcelona, Dept Fis, Bellaterra 08193, Spain

[5] IHP, D-15236 Frankfurt, Oder, Germany

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 01期

关键词：

GROWTH;

D O I：

10.1063/1.4887349

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe2O4 films can be grown epitaxially on Si(111) using a Y2O3 buffer layer, and remarkably the Y2O3/Si(111) interface is stable and remains atomically sharp. CoFe2O4 films present high crystal quality and high saturation magnetization. (C) 2014 AIP Publishing LLC.

引用

页数：4

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