Study of AlN dielectric film on graphene by Raman microscopy

被引：35

作者：

Jin, Zhi ^{[1
]}

Su, Yongbo ^{[1
]}

Chen, Jianwu ^{[1
]}

Liu, Xinyu ^{[1
]}

Wu, Dexin ^{[1
]}

机构：

[1] Chinese Acad Sci, Microwave Device & IC Dept, Inst Microelect, Beijing 100029, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 23期

关键词：

SPECTROSCOPY; GRAPHITE; LAYER;

D O I：

10.1063/1.3271676

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dielectric film on graphene severely affects the performance of graphene field-effect transistors (GFETs). The authors investigated AlN dielectric film on graphene by Raman microscopy. AlN deposition led to the appearance of disorder-related peaks and to a wider Raman-active peak. The intensities of the disorder-related modes decreased exponentially with an increase in the layer number of graphene, indicating that AlN dielectric film mainly affected the surface of graphene. According to the experimental results, the authors suggested that few-layer graphene might be a better choice than single-layer graphene for the application of GFET. (C) 2009 American Institute of Physics. [doi:10.1063/1.3271676]

引用

页数：3

共 11 条

[1] Making graphene visible [J].

Blake, P. ;

Hill, E. W. ;

Castro Neto, A. H. ;

Novoselov, K. S. ;

Jiang, D. ;

Yang, R. ;

Booth, T. J. ;

Geim, A. K. .

APPLIED PHYSICS LETTERS, 2007, 91 (06)

[2] Temperature-dependent transport in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Hone, J. ;

Stormer, H. L. ;

Kim, P. .

PHYSICAL REVIEW LETTERS, 2008, 101 (09)

[3] Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane [J].

Elias, D. C. ;

Nair, R. R. ;

Mohiuddin, T. M. G. ;

Morozov, S. V. ;

Blake, P. ;

Halsall, M. P. ;

Ferrari, A. C. ;

Boukhvalov, D. W. ;

Katsnelson, M. I. ;

Geim, A. K. ;

Novoselov, K. S. .

SCIENCE, 2009, 323 (5914) :610-613

[4] Raman spectroscopy of graphene and graphite: Disorder, electron-phonon coupling, doping and nonadiabatic effects [J].

Ferrari, Andrea C. .

SOLID STATE COMMUNICATIONS, 2007, 143 (1-2) :47-57

[5] Spatially resolved raman spectroscopy of single- and few-layer graphene [J].

Graf, D. ;

Molitor, F. ;

Ensslin, K. ;

Stampfer, C. ;

Jungen, A. ;

Hierold, C. ;

Wirtz, L. .

NANO LETTERS, 2007, 7 (02) :238-242

[6] Raman scattering from high-frequency phonons in supported n-graphene layer films [J].

Gupta, A. ;

Chen, G. ;

Joshi, P. ;

Tadigadapa, S. ;

Eklund, P. C. .

NANO LETTERS, 2006, 6 (12) :2667-2673

[7]

MOON J, 2009, 215 ECS M SAN FRANC

[8] Electric field effect in atomically thin carbon films [J].

Novoselov, KS ;

Geim, AK ;

Morozov, SV ;

Jiang, D ;

Zhang, Y ;

Dubonos, SV ;

Grigorieva, IV ;

Firsov, AA .

SCIENCE, 2004, 306 (5696) :666-669

[9] Temperature-dependent Raman spectra and anomalous Raman phenomenon of highly oriented pyrolytic graphite [J].

Tan, PH ;

Deng, YM ;

Zhao, Q .

PHYSICAL REVIEW B, 1998, 58 (09) :5435-5439

[10] Top-gated graphene field-effect-transistors formed by decomposition of SiC [J].

Wu, Y. Q. ;

Ye, P. D. ;

Capano, M. A. ;

Xuan, Y. ;

Sui, Y. ;

Qi, M. ;

Cooper, J. A. ;

Shen, T. ;

Pandey, D. ;

Prakash, G. ;

Reifenberger, R. .

APPLIED PHYSICS LETTERS, 2008, 92 (09)

← 1 2 →