Threshold power and internal loss in the stimulated scattering of microcavity polaritons

被引:7
作者
Krizhanovskii, DN [1 ]
Tartakovskii, AI
Kulakovskii, VD
Skolnick, MS
Roberts, JS
机构
[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia
[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[3] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
关键词
D O I
10.1103/PhysRevB.66.165329
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Circularly polarized excitation (sigma(+)) and detection (sigma(+),sigma(-)) techniques are employed to demonstrate the role of internal losses in determining threshold powers and spectroscopic energies in the regime of stimulated polariton scattering. Very marked increases of linewidth with temperature and excitation intensity are found for the nonstimulated sigma(-) minority spin orientation, and provide a direct probe of the internal losses. The losses thus determined provide a very good explanation for the increases of threshold power and the blueshifts in signal and idler energies with temperature found for the stimulated sigma(+) emission. Good semiquantitative agreement with recent theories is found.
引用
收藏
页码:1 / 5
页数:5
相关论文
共 21 条
  • [1] Parametric oscillation in a vertical microcavity: A polariton condensate or micro-optical parametric oscillation
    Baumberg, JJ
    Savvidis, PG
    Stevenson, RM
    Tartakovskii, AI
    Skolnick, MS
    Whittaker, DM
    Roberts, JS
    [J]. PHYSICAL REVIEW B, 2000, 62 (24) : 16247 - 16250
  • [2] Parametric luminescence of microcavity polaritons
    Ciuti, C
    Schwendimann, P
    Quattropani, A
    [J]. PHYSICAL REVIEW B, 2001, 63 (04):
  • [3] Theory of the angle-resonant polariton amplifier
    Ciuti, C
    Schwendimann, P
    Deveaud, B
    Quattropani, A
    [J]. PHYSICAL REVIEW B, 2000, 62 (08): : R4825 - R4828
  • [4] Stimulated secondary emission from semiconductor microcavities
    Erland, J
    Mizeikis, V
    Langbein, W
    Jensen, JR
    Hvam, JM
    [J]. PHYSICAL REVIEW LETTERS, 2001, 86 (25) : 5791 - 5794
  • [5] Nonlinear emission of semiconductor microcavities in the strong coupling regime
    Houdré, R
    Weisbuch, C
    Stanley, RP
    Oesterle, U
    Ilegems, M
    [J]. PHYSICAL REVIEW LETTERS, 2000, 85 (13) : 2793 - 2796
  • [6] Energy relaxation of resonantly excited polaritons in semiconductor microcavities
    Krizhanovskii, DN
    Tartakovskii, AI
    Chernenko, AV
    Kulakovskii, VD
    Emam-Ismail, M
    Skolnick, MS
    Roberts, JS
    [J]. SOLID STATE COMMUNICATIONS, 2001, 118 (11) : 583 - 587
  • [7] Spin-dependent exciton-exciton interactions in quantum wells
    Le Jeune, P
    Marie, X
    Amand, T
    Romstad, F
    Perez, F
    Barrau, J
    Brousseau, M
    [J]. PHYSICAL REVIEW B, 1998, 58 (08): : 4853 - 4859
  • [8] Polariton lasing by exciton-electron scattering in semiconductor microcavities
    Malpuech, G
    Kavokin, A
    Di Carlo, A
    Baumberg, JJ
    [J]. PHYSICAL REVIEW B, 2002, 65 (15) : 1 - 4
  • [9] High-temperature ultrafast polariton parametric amplification in semiconductor microcavities
    Saba, M
    Ciuti, C
    Bloch, J
    Thierry-Mieg, V
    André, R
    Dang, LS
    Kundermann, S
    Mura, A
    Bongiovanni, G
    Staehli, JL
    Deveaud, B
    [J]. NATURE, 2001, 414 (6865) : 731 - 735
  • [10] Off-branch polaritons and multiple scattering in semiconductor microcavities
    Savvidis, PG
    Ciuti, C
    Baumberg, JJ
    Whittaker, DM
    Skolnick, MS
    Roberts, JS
    [J]. PHYSICAL REVIEW B, 2001, 64 (07): : 753111 - 7531110