A Global Continuous Channel Potential Solution for Double-Gate MOSFETs

被引：0
|
作者：
Liu, Feng [1 ,2 ]
He, Jin [1 ,2 ]
Zhang, Jian [2 ]
Chan, Mansun J. [3 ]
机构：
[1] Peking Univ, Shenzhen Grad Sch, Key Lab Integrated Microsyst, Shenzhen, Peoples R China
[2] Peking Univ, Key Lab Microelect Device & Circuits, Minist Educ, EECS,TSRC, Beijing, Peoples R China
[3] Hong Kong Univ Sci & Technol, Dept ECE, Hong Kong, Peoples R China
来源：
EDSSC: 2008 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A global continuous channel potential solution is proposed for the modeling of symmetric double-gate (DG) MOSFETs. To obtain the channel potential, from accumulation to inversion regions, I-D Poisson's equation in the silicon film of the DG MOSFETs is solved physically. The extensive comparisons between the calculated results and numerical simulations illustrate that the analytical solution is not only accurate and continuous in the whole operation regime of DG MOSFETs, but also valid to various doping concentrations and geometrical sizes, without any fitting parameter.
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页码：156 / +
页数：2
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