Fabrications of GaAs quantum dots by modified droplet epitaxy

被引：272
作者：
Watanabe, K
Koguchi, N
Gotoh, Y
机构：
[1] Natl Res Inst Met, Tsukuba, Ibaraki 3050047, Japan
[2] Sci Univ Tokyo, Dept Mat Sci & Technol, Noda, Chiba 2788510, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 2A期
关键词：
quantum dots; self-organization; droplet epitaxy; MBE; GaAs; AlGaAs;
D O I：
10.1143/JJAP.39.L79
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We propose a modified droplet epitaxy method for fabricating self-organized GaAS/AlGaAs quantum dots (QDs) with a high As flux irradiation and a low substrate temperature. By our novel method, GaAs QDs were successfully formed, retaining their pyramidal shape; original base size and density of droplets, and preventing layer-by-layer growth. Quantum size effects of the QDs were distinctly observed by photoluminescence measurements. It was confirmed that this new modified droplet epitaxy method is promising for fabricating a high-quality GaAs/AlGaAs QD system.
引用
收藏
页码：L79 / L81
页数：3
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