Effect of Sulfur Treatment on the γ-ray Detection Quality of Al/CdTe/Pt Schottky Diode

被引：0

作者：

Yamazato, Masaaki ^{[1
]}

Yamauchi, Tetsuya ^{[1
]}

Ohno, Ryoichi ^{[2
]}

Higa, Akira ^{[1
]}

机构：

[1] Univ Ryukyus, Dept Elect & Elect Engn, 1 Senbaru, Okinawa 9030213, Japan

[2] Acrorad Co Ltd, Okinawa 9042234, Japan

来源：

2008 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (2008 NSS/MIC), VOLS 1-9 | 2009年

关键词：

X-RAY; PLASMA TREATMENT; CDTE; SURFACE;

D O I：

暂无

中图分类号：

R8 [特种医学]; R445 [影像诊断学];

学科分类号：

1002 ; 100207 ; 1009 ;

摘要：

We have studied the effects of sulfur treatment on the performance of an Al/CdTe/Pt Schottky diode. The CdTe(111)Te surface was treated by (NH4)(2)S-x solution before deposition of Al Schottky electrode. The Te-rich layer on the CdTe surface was removed and the CdS thin layer was grown by sulfur treatment. After 2 min sulfur treatment, the leakage current at 600 V applied voltage of Al/CdTe/Pt Schottky diode was remarkably decreased than non-treated sample. Also, the polarization phenomenon was drastically suppressed by sulfur treatment. After 20 hours from the start of the gamma-ray detection, FWHM of 59.5 keV showed less than 2.0 keV.

引用

页码：5053 / +

页数：3

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