A 0.65 THz Focal-Plane Array in a Quarter-Micron CMOS Process Technology

被引:351
作者
Ojefors, Erik [1 ]
Pfeiffer, Ullrich R. [1 ]
Lisauskas, Alvydas [2 ]
Roskos, Hartmut G. [2 ]
机构
[1] Univ Wuppertal, Inst High Frequency & Commun Technol, D-42119 Wuppertal, Germany
[2] Goethe Univ Frankfurt, Inst Phys, D-6000 Frankfurt, Germany
关键词
Submillimeter wave detectors; submillimeter wave imaging; microstrip antennas; CMOS; terahertz direct detection; resistive mixer; distributed resistive self-mixing; MILLIMETER-WAVE; TERAHERTZ; SILICON;
D O I
10.1109/JSSC.2009.2021911
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A focal-plane array (FPA) for room-temperature detection of 0.65-THz radiation has been fully integrated in a low-cost 0.25 mu m CMOS process technology. The circuit architecture is based on the principle of distributed resistive self-mixing and facilitates broadband direct detection well beyond the cutoff frequency of the technology. The 3 x 5 pixel array consists of differential on-chip patch antennas, NMOS direct detectors, and integrated 43-dB voltage amplifiers. At 0.65 THz the FPA achieves a responsivity (R-v) of 80 kV/W and a noise equivalent power (NEP) of 300 PW/root Hz. Active multi-pixel imaging of postal envelopes demonstrates the FPAs potential for future cost-effective terahertz imaging solutions.
引用
收藏
页码:1968 / 1976
页数:9
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