Influence of laser pulse duration in single event upset testing

被引：40

作者：

Douin, A. ^{[1
]}

Pouget, V.

Darracq, F.

Lewis, D.

Fouillat, P.

Perdu, P.

机构：

[1] Univ Bordeaux 1, CNRS, UMR 5818, IXL Lab, F-33405 Talence, France

[2] CNES, F-31401 Toulouse, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2006年 / 53卷 / 04期

关键词：

critical charge; device simulation; laser testing; pulse duration; single event upset;

D O I：

10.1109/TNS.2006.880939

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Device simulations of laser induced SEU in an SRAM cell are performed with pulse durations from 100 fs to 100 mu s. SEU threshold energy is notably dependent on the pulse duration. Two regimes are identified and modeled analytically and electrically.

引用

页码：1799 / 1805

页数：7

共 16 条

[1] The radiation sensitivity mapping of ICs using an IR pulsed laser system [J].

Alpat, B ;

Battiston, R ;

Bizzarri, M ;

Caraffini, D ;

Fiori, E ;

Papi, A ;

Petasecca, M ;

Pontetti, A .

MICROELECTRONICS RELIABILITY, 2003, 43 (06) :981-984

[2]

BAUMANN R, 2005, IEEE NSREC SHORT COU

[3] Laboratory tests for single-event effects [J].

Buchner, S ;

McMorrow, D ;

Melinger, J ;

Campbell, AB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (02) :678-686

[4] Backside SEU laser testing for commercial off-the-shelf SRAMs [J].

Darracq, F ;

Lapuyade, H ;

Buard, N ;

Mounsi, F ;

Foucher, B ;

Fouillat, P ;

Calvet, MC ;

Dufayel, R .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (06) :2977-2983

[5] Critical charge concepts for CMOS SRAMs [J].

Dodd, PE ;

Sexton, FW .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1995, 42 (06) :1764-1771

[6] Electrical modeling for laser testing with different pulse durations [J].

Douin, A ;

Pouget, V ;

Lewis, D ;

Fouillat, P ;

Perdu, P .

11TH IEEE INTERNATIONAL ON-LINE TESTING SYMPOSIUM, 2005, :9-13

[7]

Fouillat P., 2004, International Journal of High Speed Computing, V14, P327, DOI 10.1142/S0129156404002387

[8] A FIELD-FUNNELING EFFECT ON THE COLLECTION OF ALPHA-PARTICLE-GENERATED CARRIERS IN SILICON DEVICES [J].

HSIEH, CM ;

MURLEY, PC ;

OBRIEN, RR .

ELECTRON DEVICE LETTERS, 1981, 2 (04) :103-105

[9]

JONES R, 2000, P RADECS FONT FRANC, P148

[10] Backside laser testing of ICs for SET sensitivity evaluation [J].

Lewis, D ;

Pouget, V ;

Beaudoin, F ;

Perdu, P ;

Lapuyade, H ;

Fouillat, P ;

Touboul, A .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) :2193-2201

← 1 2 →