共 7 条
A Wideband Common-gate LNA with Enhanced Linearity by Using Complementary MGTR Technique
被引:0
作者:
Guo, Benqing
[1
]
Chen, Jun
[1
]
Li, Yueyue
[1
]
Jin, Haiyan
[1
]
Yang, Yongjun
[1
]
Chen, Weijian
[1
]
机构:
[1] UESTC, Sch Commun & Informat Engn, Chengdu 611731, Sichuan, Peoples R China
来源:
2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)
|
2016年
关键词:
D O I:
暂无
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
A wideband capacitor cross-coupled common-gate low-noise amplifier (CGLNA) featured with improved linearity is proposed. The linearity is enhanced by complementary multi-gated transistor (CMGTR) technique. The bulk voltage and scaling size are tuned to shift the nonlinear coefficients of auxiliary transistors, compensating the nonlinearity of main transistors. Simulated in a 0.18 [tm RF CMOS process, the LNA achieves a flat voltage gain of 20.2 dB, a noise figure (NF) of 1.62.6 dB, and an input-referred third-order intercept point (IIP3) of 8.910.2 dBm over a 3 dB bandwidth of 0.2-1.6 GHz, respectively. It consumes only 3.5 mA from a 2.2 V supply.
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页码:1540 / 1542
页数:3
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