A Wideband Common-gate LNA with Enhanced Linearity by Using Complementary MGTR Technique

被引：0

作者：

Guo, Benqing ^{[1
]}

Chen, Jun ^{[1
]}

Li, Yueyue ^{[1
]}

Jin, Haiyan ^{[1
]}

Yang, Yongjun ^{[1
]}

Chen, Weijian ^{[1
]}

机构：

[1] UESTC, Sch Commun & Informat Engn, Chengdu 611731, Sichuan, Peoples R China

来源：

2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A wideband capacitor cross-coupled common-gate low-noise amplifier (CGLNA) featured with improved linearity is proposed. The linearity is enhanced by complementary multi-gated transistor (CMGTR) technique. The bulk voltage and scaling size are tuned to shift the nonlinear coefficients of auxiliary transistors, compensating the nonlinearity of main transistors. Simulated in a 0.18 [tm RF CMOS process, the LNA achieves a flat voltage gain of 20.2 dB, a noise figure (NF) of 1.62.6 dB, and an input-referred third-order intercept point (IIP3) of 8.910.2 dBm over a 3 dB bandwidth of 0.2-1.6 GHz, respectively. It consumes only 3.5 mA from a 2.2 V supply.

引用

页码：1540 / 1542

页数：3

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