Ge1-xSnx alloys synthesized by ion implantation and pulsed laser melting

被引：23

作者：

Gao, Kun ^{[1
,2
]}

Prucnal, S. ^{[1
]}

Huebner, R. ^{[1
]}

Baehtz, C. ^{[1
]}

Skorupa, I. ^{[1
]}

Wang, Yutian ^{[1
,2
]}

Skorupa, W. ^{[1
]}

Helm, M. ^{[1
,2
]}

Zhou, Shengqiang ^{[1
]}

机构：

[1] HZDR, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

[2] Tech Univ Dresden, D-01062 Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 04期

关键词：

CARRIER MOBILITY; GE; GERMANIUM; STRAIN; SI; SEMICONDUCTORS; DEPENDENCE; GAAS; GAP;

D O I：

10.1063/1.4891848

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The tunable bandgap and the high carrier mobility of Ge1-xSnx alloys stimulate a large effort for bandgap and strain engineering for Ge based materials using silicon compatible technology. In this Letter, we present the fabrication of highly mismatched Ge1-xSnx alloys by ion implantation and pulsed laser melting with Sn concentration ranging from 0.5 at. % up to 1.5 at. %. According to the structural investigations, the formed Ge1-xSnx alloys are monocrystalline with high Sn-incorporation rate. The shrinkage of the bandgap of Ge1-xSnx alloys with increasing Sn content is proven by the red-shift of the E-1 and E-1 + Delta(1) critical points in spectroscopic ellipsometry. Our investigation provides a chip technology compatible route to prepare high quality monocrystalline Ge1-xSnx alloys. (c) 2014 AIP Publishing LLC.

引用

页数：5

共 31 条

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