Binding energy and self-polarization as function of energy density in GaAs/AlAs quantum well wires

被引：15
作者：
Erdogan, I.
Akankan, O.
Akbas, H. [1 ]
机构：
[1] Trakya Univ, Dept Phys, TR-22030 Edirne, Turkey
[2] Trakya Univ, Int Ctr Phys & Appl Math, TR-22030 Edirne, Turkey
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 35卷 / 01期
关键词：
shallow donors; quantum well wires; energy density; polarization;
D O I：
10.1016/j.physe.2006.05.001
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this work, we have investigated the effect of both external electric and magnetic fields on the ground-state binding energy and the self-polarization of hydrogenic impurity in square and cylindrical GaAs/AlAs quantum well wires as function of energy density and impurity position. The binding energies and self-polarizations were obtained using the effective-mass approximation within a variational scheme. (c) 2006 Elsevier B.V. All rights reserved.
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收藏
页码：27 / 32
页数：6
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