End of range defects in Ge

We show that the solid-phase epitaxial regrowth of amorphous layers created by ion implantation in Ge results in the formation of extended defects of interstitial-type. During annealing, these defects evolve in size and density following, as in Si, an Ostwald ripening mechanism. However, this process becomes nonconservative as the annealing temperature increases to 600 degrees C. This suggests that the recombination/annihilation of Ge interstitial atoms becomes important at these temperatures. These results have important implications for the modeling of diffusion of implanted dopants in Ge. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3153985]