Multi-bit storage through Si nanocrystals embedded in SiO2

被引：13

作者：

Lombardo, S

Corso, D

Crupi, I

Gerardi, C

Ammendola, G

Melanotte, M

De Salvo, B

Perniola, L

机构：

[1] CNR, IMM, Sez Catania, I-95121 Catania, Italy

[2] ST Microelect, I-95121 Catania, Italy

[3] CEA, LETI, Grenoble, France

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 72卷 / 1-4期

关键词：

D O I：

10.1016/j.mee.2004.01.023

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have realized Si nanocrystal memory cells in which the Si dots have been deposited by CVD on SiO2 and then covered by a CVD control oxide. In this paper, we report a study on the potential of these cells for dual bit storage. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：411 / 414

页数：4

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