Terahertz radiation from large aperture bulk semi-insulating GaAs photoconductive dipole antenna

We report the experimental results of a large-aperture biased semi-insulating GaAs photoconductive dipole antenna, with a gap of 3 mm between two Au/Ge/Ni electrodes, triggered by 800 nm Ti-sapphire laser pulses with 82 MHz repetition rate. A direct comparison is made between insulated GaAs dipole antenna with a Si3N4 layer and bare GaAs dipole antenna. Both the current in the antenna and the radiation amplitude present as linear to the exciting power when the applied, voltage is fixed. The Si3N4 insulated GaAs dipole antenna can hold higher biased voltage than a normal GaAs dipole antenna; its terahertz radiation generation elficiency is significantly higher than that of a normal GaAs dipole antenna.