Flexible active-matrix organic light-emitting diode display enabled by MoS2 thin-film transistor

被引：189

作者：

Choi, Minwoo ^{[1
]}

Park, Yong Ju ^{[1
]}

Sharma, Bhupendra K. ^{[1
]}

Bae, Sa-Rang ^{[2
]}

Kim, Soo Young ^{[2
]}

Ahn, Jong-Hyun ^{[1
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 03722, South Korea

[2] Chung Ang Univ, Sch Chem Engn & Mat Sci, Seoul 06974, South Korea

来源：

SCIENCE ADVANCES | 2018年 / 4卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

FIELD-EFFECT TRANSISTORS; ELECTRONIC SKIN; LOW-VOLTAGE; PERFORMANCE; CONTACTS; DEVICES; GROWTH; SENSOR;

D O I：

10.1126/sciadv.aas8721

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Atomically thin molybdenum disulfide (MoS2) has been extensively investigated in semiconductor electronics but has not been applied in a backplane circuitry of organic light-emitting diode (OLED) display. Its applicability as an active drive element is hampered by the large contact resistance at the metal/MoS2 interface, which hinders the transport of carriers at the dielectric surface, which in turn considerably deteriorates the mobility. Modified switching device architecture is proposed for efficiently exploiting the high-k dielectric Al2O3 layer, which, when integrated in an active matrix, can drive the ultrathin OLED display even in dynamic folding states. The proposed architecture exhibits 28 times increase in mobility compared to a normal back-gated thin-film transistor, and its potential as a wearable display attached to a human wrist is demonstrated.

引用

页数：7

共 36 条

[21] Low-Voltage, Low-Power, Organic Light-Emitting Transistors for Active Matrix Displays [J].

McCarthy, M. A. ;

Liu, B. ;

Donoghue, E. P. ;

Kravchenko, I. ;

Kim, D. Y. ;

So, F. ;

Rinzler, A. G. .

SCIENCE, 2011, 332 (6029) :570-573

[22] MoS2-Based Tactile Sensor for Electronic Skin Applications [J].

Park, Minhoon ;

Park, Yong Ju ;

Chen, Xiang ;

Park, Yon-Kyu ;

Kim, Min-Seok ;

Ahn, Jong-Hyun .

ADVANCED MATERIALS, 2016, 28 (13) :2556-+

[23] Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates [J].

Sanne, A. ;

Ghosh, R. ;

Rai, A. ;

Movva, H. C. P. ;

Sharma, A. ;

Rao, R. ;

Mathew, L. ;

Banerjee, S. K. .

APPLIED PHYSICS LETTERS, 2015, 106 (06)

[24]

Sekitani T, 2009, NAT MATER, V8, P494, DOI [10.1038/NMAT2459, 10.1038/nmat2459]

[25] Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor [J].

Song, Jeong-Gyu ;

Kim, Seok Jin ;

Woo, Whang Je ;

Kim, Youngjun ;

Oh, Il-Kwon ;

Ryu, Gyeong Hee ;

Lee, Zonghoon ;

Lim, Jun Hyung ;

Park, Jusang ;

Kim, Hyungjun .

ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (41) :28130-28135

[26]

Takei K, 2010, NAT MATER, V9, P821, DOI [10.1038/NMAT2835, 10.1038/nmat2835]

[27] A skin-inspired organic digital mechanoreceptor [J].

Tee, Benjamin C. -K. ;

Chortos, Alex ;

Berndt, Andre ;

Nguyen, Amanda Kim ;

Tom, Ariane ;

McGuire, Allister ;

Lin, Ziliang Carter ;

Tien, Kevin ;

Bae, Won-Gyu ;

Wang, Huiliang ;

Mei, Ping ;

Chou, Ho-Hsiu ;

Cui, Bianxiao ;

Deisseroth, Karl ;

Ng, Tse Nga ;

Bao, Zhenan .

SCIENCE, 2015, 350 (6258) :313-+

[28] Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide [J].

Valsaraj, Amithraj ;

Chang, Jiwon ;

Rai, Amritesh ;

Banerjee, Sanjay K. .

2D MATERIALS, 2015, 2 (04)

[29]

Wang C, 2013, NAT MATER, V12, P899, DOI [10.1038/NMAT3711, 10.1038/nmat3711]

[30] Highly Stretchable and Self-Deformable Alternating Current Electroluminescent Devices [J].

Wang, Jiangxin ;

Yan, Chaoyi ;

Chee, Kenji Jianzhi ;

Lee, Pooi See .

ADVANCED MATERIALS, 2015, 27 (18) :2876-+

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