Flexible active-matrix organic light-emitting diode display enabled by MoS2 thin-film transistor

被引:189
作者
Choi, Minwoo [1 ]
Park, Yong Ju [1 ]
Sharma, Bhupendra K. [1 ]
Bae, Sa-Rang [2 ]
Kim, Soo Young [2 ]
Ahn, Jong-Hyun [1 ]
机构
[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 03722, South Korea
[2] Chung Ang Univ, Sch Chem Engn & Mat Sci, Seoul 06974, South Korea
来源
SCIENCE ADVANCES | 2018年 / 4卷 / 04期
基金
新加坡国家研究基金会;
关键词
FIELD-EFFECT TRANSISTORS; ELECTRONIC SKIN; LOW-VOLTAGE; PERFORMANCE; CONTACTS; DEVICES; GROWTH; SENSOR;
D O I
10.1126/sciadv.aas8721
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Atomically thin molybdenum disulfide (MoS2) has been extensively investigated in semiconductor electronics but has not been applied in a backplane circuitry of organic light-emitting diode (OLED) display. Its applicability as an active drive element is hampered by the large contact resistance at the metal/MoS2 interface, which hinders the transport of carriers at the dielectric surface, which in turn considerably deteriorates the mobility. Modified switching device architecture is proposed for efficiently exploiting the high-k dielectric Al2O3 layer, which, when integrated in an active matrix, can drive the ultrathin OLED display even in dynamic folding states. The proposed architecture exhibits 28 times increase in mobility compared to a normal back-gated thin-film transistor, and its potential as a wearable display attached to a human wrist is demonstrated.
引用
收藏
页数:7
相关论文
共 36 条
[1]   Electrical contacts to two-dimensional semiconductors [J].
Allain, Adrien ;
Kang, Jiahao ;
Banerjee, Kaustav ;
Kis, Andras .
NATURE MATERIALS, 2015, 14 (12) :1195-1205
[2]  
[Anonymous], 2016, ADV SCI
[3]  
Bonaccorso F, 2010, NAT PHOTONICS, V4, P611, DOI [10.1038/nphoton.2010.186, 10.1038/NPHOTON.2010.186]
[4]   Stretchable Active Matrix Inorganic Light-Emitting Diode Display Enabled by Overlay-Aligned Roll-Transfer Printing [J].
Choi, Minwoo ;
Jang, Bongkyun ;
Lee, Wonho ;
Lee, Seonwoo ;
Kim, Tae Woong ;
Lee, Hak-Joo ;
Kim, Jae-Hyun ;
Ahn, Jong-Hyun .
ADVANCED FUNCTIONAL MATERIALS, 2017, 27 (11)
[5]   High-Performance Monolayer WS2 Field-Effect Transistors on High-κ Dielectrics [J].
Cui, Yang ;
Xin, Run ;
Yu, Zhihao ;
Pan, Yiming ;
Ong, Zhun-Yong ;
Wei, Xiaoxu ;
Wang, Junzhuan ;
Nan, Haiyan ;
Ni, Zhenhua ;
Wu, Yun ;
Chen, Tangsheng ;
Shi, Yi ;
Wang, Baigeng ;
Zhang, Gang ;
Zhang, Yong-Wei ;
Wang, Xinran .
ADVANCED MATERIALS, 2015, 27 (35) :5230-5234
[6]   Nanomaterials in transistors: From high-performance to thin-film applications [J].
Franklin, Aaron D. .
SCIENCE, 2015, 349 (6249)
[7]   Fully integrated wearable sensor arrays for multiplexed in situ perspiration analysis [J].
Gao, Wei ;
Emaminejad, Sam ;
Nyein, Hnin Yin Yin ;
Challa, Samyuktha ;
Chen, Kevin ;
Peck, Austin ;
Fahad, Hossain M. ;
Ota, Hiroki ;
Shiraki, Hiroshi ;
Kiriya, Daisuke ;
Lien, Der-Hsien ;
Brooks, George A. ;
Davis, Ronald W. ;
Javey, Ali .
NATURE, 2016, 529 (7587) :509-+
[8]   Plastic transistors in active-matrix displays - The handling of grey levels by these large displays paves the way for electronic paper. [J].
Huitema, HEA ;
Gelinck, GH ;
van der Putten, JBPH ;
Kuijk, KE ;
Hart, CM ;
Cantatore, E ;
Herwig, PT ;
van Breemen, AJJM ;
de Leeuw, DM .
NATURE, 2001, 414 (6864) :599-599
[9]   Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering [J].
Jena, Debdeep ;
Konar, Aniruddha .
PHYSICAL REVIEW LETTERS, 2007, 98 (13)
[10]   Layer-controlled CVD growth of large-area two-dimensional MoS2 films [J].
Jeon, Jaeho ;
Jang, Sung Kyu ;
Jeon, Su Min ;
Yoo, Gwangwe ;
Jang, Yun Hee ;
Park, Jin-Hong ;
Lee, Sungjoo .
NANOSCALE, 2015, 7 (05) :1688-1695