The Seebeck coefficient of monocrystalline α-SiC and polycrystalline β-SiC measured at 300-533 K

被引：15

作者：

Abu-Ageel, N

Aslam, M

Ager, R

Rimai, L

机构：

[1] Ford Res Lab, Dearborn, MI 48121 USA

[2] Michigan State Univ, Dept Elect Engn, E Lansing, MI 48824 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2000年 / 15卷 / 01期

关键词：

D O I：

10.1088/0268-1242/15/1/305

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature dependence of the Seebeck coefficient of polycrystalline beta-SiC films deposited on quartz substrates by laser ablation and of commercially available alpha-SiC wafers is reported in a temperature range of 300-533 K for the first time. The Seebeck emf of alpha-SiC substrates and beta-SiC samples ranges between -9 mu V degrees C-1 and -108 mu V degrees C-1 which is higher than that of commercial Pt thermocouples.

引用

页码：32 / 33

页数：2

共 8 条

[1] Temperature dependence of conductivity and Hall carrier concentration of polycrystalline SiC deposited on fused silica by laser ablation [J].