Localization and hopping conduction in glass and crystal phases of monatomic Au layers on a silicon surface

被引：5

作者：

Yamazaki, Shiro ^{[1
]}

Matsuda, Iwao ^{[1
]}

Okino, Hiroyuki ^{[1
]}

Morikawa, Harumo ^{[1
]}

Hasegawa, Shuji ^{[1
]}

机构：

[1] Univ Tokyo, Dept Phys, Sch Sci, Bunkyo Ku, Tokyo 1130033, Japan

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 08期

基金：

日本科学技术振兴机构; 日本学术振兴会;

关键词：

TRANSITION; DIFFUSION; ABSENCE;

D O I：

10.1103/PhysRevB.79.085317

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Monatomic layers of Au on Si (111) exhibit a glass-crystal phase transition between the ordered crystalline 6 x 6 reconstruction and the disordered glassy beta-root 3 x root 3 reconstruction on thermal annealing. Micro-four-point-probe electrical conductivity measurements clearly revealed that both monatomic layers had conductivities as large as the minimum metallic conductivity at the low-temperature region (similar to 10-100 K), and were well described by transport theory regarding Anderson localization. The sheet conductivity of the 6 x 6 was higher than that of the beta-root 3 x root 3, which was attributed to different degrees of carrier localization.

引用

页数：5

共 22 条

[1] SCALING THEORY OF LOCALIZATION - ABSENCE OF QUANTUM DIFFUSION IN 2 DIMENSIONS [J].